Ion implantation of epitaxial GaN films: damage, doping and activation
- North Carolina Univ., Chapel Hill, NC (United States). Dept. of Physics and Astronomy
- North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
- Oak Ridge National Lab., TN (United States)
Single-crystal GaN films grown on AlN buffer layers previously deposited on 6H-SiC(0001) were studied for radiation damage and its recovery using Rutherford backscattering/channeling, photoluminescence, and cross-sectional TEM. The highest fluence of (1e15 cm{sup -2}) 110 keV Mg and 160 keV Si produced little damage at implantation temperature 550 C. RT damage was higher for same fluences compared to 550 C implantation. The damage was partially annealed by RTA at 1000 C, however, this was not enough to recover the PL signal even for the lowest fluence (1e14 cm{sup -2}). XTEM of as-implanted samples revealed small clusters of defects extended beyond the projected ion range. To recover damage completely, perhaps one needs to go either much higher RTA temperature and/or implant samples in a smaller fluence increment and anneal in between implants to recover the damage.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 459981
- Report Number(s):
- CONF-960994-16; ON: DE97004285; TRN: 97:007261
- Resource Relation:
- Conference: IBMM `96: 10. international conference on ion beam modification of materials, Albuquerque, NM (United States), 1-6 Sep 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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