Beamline and exposure station for deep x-ray lithography at the Advanced Photon Source
APS is a third-generation synchrotron radiation source. With an x-ray energy of 19.5 keV and highly collimated beam (<0.1 mrad), APS is well suited for producing high-aspect-ratio microstructures in thick resist films (> 1 mm) using deep x-ray lithography (DXRL). The 2-BM beamline was constructed and will be used for DXRL at APS. Selection of appropriate x-ray energy range is done through a variable-angle mirror and various filters in the beamline. At the exposure station, the beam size will be 100(H) x 5(V) mm{sup 2}. Uniform exposure will be achieved by a high-speed (100 mm/sec) vertical scanner, which allows precise angular ({approximately}0.1 mrad) and positional (< 1 {mu}m) control of the sample, allowing full use of the highly collimated beam for lateral accuracy and control of sidewall slopes during exposure of thick resists, as well as generation of conicals and other profiles. For 1-mm-thick PMMA, a 100 x 25 mm{sup 2} area can be fully exposed in about 1/2 hr, while even 10-mm-thick PMMA will require only 2-3 hours.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 442216
- Report Number(s):
- ANL/XFD/CP-89571; CONF-961086-8; ON: DE97000689
- Resource Relation:
- Conference: SPIE conference on micromachining and microfabrication, Austin, TX (United States), 14-15 Oct 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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