Toward understanding and modeling of impurity gettering in silicon
- Duke Univ., Durham, NC (United States)
Gettering of harmful impurities away from the device active regions has already become an integral part of manufacturing integrated circuits (IC) using Czochralski (CZ) Si wafers, and is experiencing an increasing importance in Si solar cell fabrications for improving the cell efficiency. Gettering consists of (1) the creation of suitable gettering sites; and (2) the gettering processes of contaminants. Requirements for successful gettering differ between the IC and solar cell cases, because ICs are monolithic devices situated at the Si wafer surfaces while solar cells are bulk devices, and because the Si substrate materials used are different. For IC fabrications, the method used is that of intrinsic or internal gettering (IG) which utilizes oxygen precipitates and their associated defects in the CZ Si wafer bulk as gettering sites. Because of the bulk nature of IG sites, the scheme cannot be used also for solar cells. Only some kind of extrinsic or external gettering (EG) schemes with gettering sites located at the wafer surface regions can be used for solar cells. The gettering of the harmful contaminants, usually metals, to the gettering region involves the metal dissolution from precipitated state, the metal atom diffusion to and the stabilization at the gettering sites. A mathematical model of the gettering process is presented.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- OSTI ID:
- 415138
- Report Number(s):
- NREL/SP-413-8250; CONF-9508143-Extd.Absts.; ON: DE95009278; TRN: 96:006512-0022
- Resource Relation:
- Conference: 5. workshop on the role of impurities and defects in silicon device processing, Copper Mountain, CO (United States), 13-16 Aug 1995; Other Information: PBD: Aug 1995; Related Information: Is Part Of Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts; Sopori, B.L.; Luque, A.; Sopori, B.; Swanson, D.; Gee, J.; Kalejs, J.; Jastrzebski, L.; Tan, T.; PB: 160 p.
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
99 MATHEMATICS
COMPUTERS
INFORMATION SCIENCE
MANAGEMENT
LAW
MISCELLANEOUS
GETTERING
MATHEMATICAL MODELS
SILICON
PROCESSING
METALS
IMPURITIES
SILICON SOLAR CELLS
DISSOLUTION
INTEGRATED CIRCUITS
MANUFACTURING
PRECIPITATION