skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon

Abstract

The authors performed a detailed study to examine the limiting performance available using photovoltaic-grade Cz silicon. Photovoltaic-grade silicon refers to silicon produced by the photovoltaic industry, which may differ from the silicon used in the semiconductor device industry in impurity and defect concentrations.The study included optimization of fabrication processes, development of advanced device structures, and detailed model calculations to project future performance improvements. Process and device optimization resulted in demonstration of 75-{micro}s bulk lifetimes and 17.6%-efficient large-area cells using photovoltaic-grade Cz silicon. Detailed calculations based on the material and device evaluation of the present work project efficiencies of 20% for photovoltaic-grade Cz silicon with properly optimized processing and device structures.

Authors:
 [1]; ;  [2]
  1. Sandia National Labs., Albuquerque, NM (United States). Photovoltaic System Components Dept.
  2. Siemens Solar Industries, Camarillo, CA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Assistant Secretary for Energy Efficiency and Renewable Energy, Washington, DC (United States)
OSTI Identifier:
414340
Report Number(s):
CONF-960513-20
ON: DE97001102; TRN: AHC29701%%38
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 25. photovoltaic solar energy conference, Washington, DC (United States), 13-17 May 1996; Other Information: PBD: [1996]
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; FABRICATION; PERFORMANCE; MATERIAL SUBSTITUTION; QUANTUM EFFICIENCY; CARRIER LIFETIME

Citation Formats

Gee, J M, King, R R, and Mitchell, K W. High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon. United States: N. p., 1996. Web.
Gee, J M, King, R R, & Mitchell, K W. High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon. United States.
Gee, J M, King, R R, and Mitchell, K W. 1996. "High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon". United States. https://www.osti.gov/servlets/purl/414340.
@article{osti_414340,
title = {High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon},
author = {Gee, J M and King, R R and Mitchell, K W},
abstractNote = {The authors performed a detailed study to examine the limiting performance available using photovoltaic-grade Cz silicon. Photovoltaic-grade silicon refers to silicon produced by the photovoltaic industry, which may differ from the silicon used in the semiconductor device industry in impurity and defect concentrations.The study included optimization of fabrication processes, development of advanced device structures, and detailed model calculations to project future performance improvements. Process and device optimization resulted in demonstration of 75-{micro}s bulk lifetimes and 17.6%-efficient large-area cells using photovoltaic-grade Cz silicon. Detailed calculations based on the material and device evaluation of the present work project efficiencies of 20% for photovoltaic-grade Cz silicon with properly optimized processing and device structures.},
doi = {},
url = {https://www.osti.gov/biblio/414340}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Dec 01 00:00:00 EST 1996},
month = {Sun Dec 01 00:00:00 EST 1996}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: