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Title: Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems

Abstract

Heavily doped Si was investigated for use as spectral control filter in thermal photovoltaic (TPV) system. These filters should reflect radiation at 4 {micro}m and above and transmit radiation at 2 {micro}m and below. Two approaches have been used for introducing impurities into Si to achieve high doping concentration. One was the diffusion technique, using spin-on dopants. The plasma wavelength ({lambda}{sub p}) of these filters could be adjusted by controlling the diffusion conditions. The minimum plasma wavelength achieved was 4.8 {micro}m. In addition, a significant amount of absorption was observed for the wavelength 2 {micro}m and below. The second approach was doping by ion implantation followed by thermal annealing with a capped layer of doped glass. Implantation with high dosage of B and As followed by high temperature annealing (> 1,000 C) resulted in a plasma wavelength that could be controlled between 3.5 and 6 {micro}m. The high temperature annealing (> 1,000 C) that was necessary to activate the dopant atoms and to heal the implantation damage, also caused significant absorption at 2 {micro}m. For phosphorus implanted Si, a moderate temperature (800--900 C) was sufficient to activate most of the phosphorus and to heal the implantation damage. The position ofmore » the plasma turn-on wavelength for an implantation dose of 2 {times} 10{sup 16} cm{sup {minus}2} of P was at 2.9 {micro}m. The absorption at 2 {micro}m was less than 20% and the reflection at 5 {micro}m was about 70%.« less

Authors:
; ; ;  [1]; ; ; ;  [2]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States)
  2. Lockheed-Martin, Schenectady, NY (United States)
Publication Date:
Research Org.:
Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
Sponsoring Org.:
USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
OSTI Identifier:
350893
Report Number(s):
KAPL-P-000011; K-95086; CONF-9507247-
ON: DE99002690; TRN: AHC29921%%78
DOE Contract Number:  
AC12-76SN00052
Resource Type:
Conference
Resource Relation:
Conference: 2. NREL conference on thermophotovoltaic generation of electricity, Colorado Springs, CO (United States), Jul 1995; Other Information: PBD: Jul 1995
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION; THERMOPHOTOVOLTAIC CONVERTERS; PHOTOVOLTAIC CELLS; OPTICAL FILTERS; SILICON; DOPED MATERIALS; SPIN-ON COATING; ION IMPLANTATION; BORON; ARSENIC; PHOSPHORUS

Citation Formats

Ehsani, H, Bhat, I, Borrego, J, Gutmann, R, Brown, E, Dzeindziel, R, Freeman, M, and Choudhury, N. Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems. United States: N. p., 1995. Web.
Ehsani, H, Bhat, I, Borrego, J, Gutmann, R, Brown, E, Dzeindziel, R, Freeman, M, & Choudhury, N. Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems. United States.
Ehsani, H, Bhat, I, Borrego, J, Gutmann, R, Brown, E, Dzeindziel, R, Freeman, M, and Choudhury, N. 1995. "Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems". United States. https://www.osti.gov/servlets/purl/350893.
@article{osti_350893,
title = {Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems},
author = {Ehsani, H and Bhat, I and Borrego, J and Gutmann, R and Brown, E and Dzeindziel, R and Freeman, M and Choudhury, N},
abstractNote = {Heavily doped Si was investigated for use as spectral control filter in thermal photovoltaic (TPV) system. These filters should reflect radiation at 4 {micro}m and above and transmit radiation at 2 {micro}m and below. Two approaches have been used for introducing impurities into Si to achieve high doping concentration. One was the diffusion technique, using spin-on dopants. The plasma wavelength ({lambda}{sub p}) of these filters could be adjusted by controlling the diffusion conditions. The minimum plasma wavelength achieved was 4.8 {micro}m. In addition, a significant amount of absorption was observed for the wavelength 2 {micro}m and below. The second approach was doping by ion implantation followed by thermal annealing with a capped layer of doped glass. Implantation with high dosage of B and As followed by high temperature annealing (> 1,000 C) resulted in a plasma wavelength that could be controlled between 3.5 and 6 {micro}m. The high temperature annealing (> 1,000 C) that was necessary to activate the dopant atoms and to heal the implantation damage, also caused significant absorption at 2 {micro}m. For phosphorus implanted Si, a moderate temperature (800--900 C) was sufficient to activate most of the phosphorus and to heal the implantation damage. The position of the plasma turn-on wavelength for an implantation dose of 2 {times} 10{sup 16} cm{sup {minus}2} of P was at 2.9 {micro}m. The absorption at 2 {micro}m was less than 20% and the reflection at 5 {micro}m was about 70%.},
doi = {},
url = {https://www.osti.gov/biblio/350893}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 1995},
month = {Sat Jul 01 00:00:00 EDT 1995}
}

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