Stability of trapped electrons in SiO{sub 2}
- Sandia National Labs., Albuquerque, NM (United States)
- CEA, Bruyeres-Le-Chatel (France)
Electron trapping near the Si/SiO{sub 2} interface plays a crucial role in mitigating the response of MOS devices to ionizing radiation or high-field stress. These electrons offset positive charge due to trapped holes, and can be present at densities exceeding 10{sup 12} cm{sup {minus}2} in the presence of a similar density of trapped positive charge. The nature of the defects that serve as hosts for trapped electrons in the near-interfacial SiO{sub 2} is presently unknown, although there is compelling evidence that these defects are often intimately associated with trapped holes. This association is depicted most directly in the model of Lelis et al., which suggests that trapped electrons and holes occupy opposite sides of a compensated E center in SiO{sub 2}. Charge exchange between electron traps and the Si can occur over a wide range of time scales, depending on the trap depth and location relative to the Si/SiO{sub 2} interface. Here the authors report a detailed study of the stability of electron traps associated with trapped holes near the Si/SiO{sub 2} interface.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 304161
- Report Number(s):
- SAND-98-1898C; CONF-981206-; ON: DE98006157; TRN: 99:002149
- Resource Relation:
- Conference: 29. IEEE semiconductor interface specialists conference, San Diego, CA (United States), 3-5 Dec 1998; Other Information: PBD: [1998]
- Country of Publication:
- United States
- Language:
- English
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