Nonlinear absorption and transmission properties of Ge, Te and InAs using tuneable IR FEL
Conference
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OSTI ID:238656
- Vanderbilt Univ., Nashville, TN (United States)
Nonlinear absorption properties of Ge, Te and InAs are being investigated using the transmission of FEL optical pulses through these semiconductors (z-scan method). Wavelength, intensity and macropulse dependence are used to differentiate between two-photon and free-carrier absorption properties of these materials. Macropulse dependence is resolved by using a Pockles Cell to chop the 4-{mu}s macropulse down to 100 ns. Results of these experiments will be presented and discussed.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- OSTI ID:
- 238656
- Report Number(s):
- BNL-61982-Absts.; CONF-9508156-Absts.; ON: DE96002729; TRN: 96:013145
- Resource Relation:
- Conference: 17. international free electron laser conference, New York, NY (United States), 21-25 Aug 1995; Other Information: PBD: [1995]; Related Information: Is Part Of 17th international free electron laser conference and 2nd international FEL users` workshop. Program and abstracts; PB: 300 p.
- Country of Publication:
- United States
- Language:
- English
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