Near-edge x-ray absorption fine structure examination of chemical bonding in sputter deposited boron and boron-nitride films
Abstract
Near-edge x-ray absorption fine structure (NEXAFS) is used to examine the chemical bonding in boron and boron-nitride films sputter deposited from a fully-dense, pure boron target. Reactive sputtering is used to prepare the boron-nitride and multilayered films. Although the process of sputter deposition often produces films that lack long range order, NEXAFS reveals the distinguishing features of sp{sup 2} and sp{sup 3} hybridization that are associated with different crystalline structures. The sensitivity of NEXAFS to local order further provides details in bonding modifications that exist in these films.
- Authors:
-
- and others
- Publication Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 230364
- Report Number(s):
- UCRL-JC-123925; CONF-960401-23
ON: DE96010243; TRN: 96:003008
- DOE Contract Number:
- W-7405-ENG-48; AC03-76SF00098
- Resource Type:
- Conference
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: May 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 66 PHYSICS; BORON; DEPOSITION; BORON NITRIDES; FINE STRUCTURE; HYBRIDIZATION; SENSITIVITY; SPUTTERING; TARGETS; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; MORPHOLOGY
Citation Formats
Jankowski, A F, Hayes, J P, and Suthreland, D G.J. Near-edge x-ray absorption fine structure examination of chemical bonding in sputter deposited boron and boron-nitride films. United States: N. p., 1996.
Web.
Jankowski, A F, Hayes, J P, & Suthreland, D G.J. Near-edge x-ray absorption fine structure examination of chemical bonding in sputter deposited boron and boron-nitride films. United States.
Jankowski, A F, Hayes, J P, and Suthreland, D G.J. 1996.
"Near-edge x-ray absorption fine structure examination of chemical bonding in sputter deposited boron and boron-nitride films". United States. https://www.osti.gov/servlets/purl/230364.
@article{osti_230364,
title = {Near-edge x-ray absorption fine structure examination of chemical bonding in sputter deposited boron and boron-nitride films},
author = {Jankowski, A F and Hayes, J P and Suthreland, D G.J.},
abstractNote = {Near-edge x-ray absorption fine structure (NEXAFS) is used to examine the chemical bonding in boron and boron-nitride films sputter deposited from a fully-dense, pure boron target. Reactive sputtering is used to prepare the boron-nitride and multilayered films. Although the process of sputter deposition often produces films that lack long range order, NEXAFS reveals the distinguishing features of sp{sup 2} and sp{sup 3} hybridization that are associated with different crystalline structures. The sensitivity of NEXAFS to local order further provides details in bonding modifications that exist in these films.},
doi = {},
url = {https://www.osti.gov/biblio/230364},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed May 01 00:00:00 EDT 1996},
month = {Wed May 01 00:00:00 EDT 1996}
}
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.