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Title: Near-edge x-ray absorption fine structure examination of chemical bonding in sputter deposited boron and boron-nitride films

Abstract

Near-edge x-ray absorption fine structure (NEXAFS) is used to examine the chemical bonding in boron and boron-nitride films sputter deposited from a fully-dense, pure boron target. Reactive sputtering is used to prepare the boron-nitride and multilayered films. Although the process of sputter deposition often produces films that lack long range order, NEXAFS reveals the distinguishing features of sp{sup 2} and sp{sup 3} hybridization that are associated with different crystalline structures. The sensitivity of NEXAFS to local order further provides details in bonding modifications that exist in these films.

Authors:
; ;  [1]
  1. and others
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
230364
Report Number(s):
UCRL-JC-123925; CONF-960401-23
ON: DE96010243; TRN: 96:003008
DOE Contract Number:  
W-7405-ENG-48; AC03-76SF00098
Resource Type:
Conference
Resource Relation:
Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: May 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 66 PHYSICS; BORON; DEPOSITION; BORON NITRIDES; FINE STRUCTURE; HYBRIDIZATION; SENSITIVITY; SPUTTERING; TARGETS; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; MORPHOLOGY

Citation Formats

Jankowski, A F, Hayes, J P, and Suthreland, D G.J. Near-edge x-ray absorption fine structure examination of chemical bonding in sputter deposited boron and boron-nitride films. United States: N. p., 1996. Web.
Jankowski, A F, Hayes, J P, & Suthreland, D G.J. Near-edge x-ray absorption fine structure examination of chemical bonding in sputter deposited boron and boron-nitride films. United States.
Jankowski, A F, Hayes, J P, and Suthreland, D G.J. 1996. "Near-edge x-ray absorption fine structure examination of chemical bonding in sputter deposited boron and boron-nitride films". United States. https://www.osti.gov/servlets/purl/230364.
@article{osti_230364,
title = {Near-edge x-ray absorption fine structure examination of chemical bonding in sputter deposited boron and boron-nitride films},
author = {Jankowski, A F and Hayes, J P and Suthreland, D G.J.},
abstractNote = {Near-edge x-ray absorption fine structure (NEXAFS) is used to examine the chemical bonding in boron and boron-nitride films sputter deposited from a fully-dense, pure boron target. Reactive sputtering is used to prepare the boron-nitride and multilayered films. Although the process of sputter deposition often produces films that lack long range order, NEXAFS reveals the distinguishing features of sp{sup 2} and sp{sup 3} hybridization that are associated with different crystalline structures. The sensitivity of NEXAFS to local order further provides details in bonding modifications that exist in these films.},
doi = {},
url = {https://www.osti.gov/biblio/230364}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed May 01 00:00:00 EDT 1996},
month = {Wed May 01 00:00:00 EDT 1996}
}

Conference:
Other availability
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