Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source

Biswas, Jyoti; Cultrera, Luca; Liu, Wei; Wang, Erdong; Skaritka, John; Kisslinger, Kim; Hawkins, S. D.; Lee, S. R.; Klem, J. F.

doi:10.1063/5.0159183

Title: Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source

Journal Article · Wed Aug 02 00:00:00 EDT 2023 · AIP Advances

DOI:https://doi.org/10.1063/5.0159183· OSTI ID:1996205

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Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Photocathodes based on GaAs and other III–V semiconductors are capable of producing highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes exhibit high spin polarization; however, the quantum efficiency (QE) is limited to 1% or less. To increase the QE, we fabricated a GaAs/GaAsP superlattice photocathode with a Distributed Bragg Reflector (DBR) underneath. This configuration creates a Fabry–Pérot cavity between the DBR and GaAs surface, which enhances the absorption of incident light and, consequently, the QE. These photocathode structures were grown using molecular beam epitaxy and achieved record quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near-bandgap photon energies.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: SC0012704; NA0003525

OSTI ID:: 1996205

Alternate ID(s):: OSTI ID: 2311453

Report Number(s):: BNL-224704-2023-JAAM; SAND-2023-07858J; TRN: US2405258

Journal Information:: AIP Advances, Vol. 13, Issue 8; ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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47 OTHER INSTRUMENTATION
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Title: Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source

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