Plasma Chemistries for High Density Plasma Etching of SiC

Journal Article · Tue Nov 10 00:00:00 EST 1998 · Journal of Electronic Materials

DOI:https://doi.org/10.1023/A:1008869724623· OSTI ID:1941

Cho, H; Hahn, Y B; Hays, D A; Hong, J; Jung, K B; Lester, L F; Ostling, M; Pearton, S J; Shul, R J; Zetterling, C -M; Zhang, L

A variety of different plasma chemistries, including SF6, Cl2, IC1 and IBr, have been examined for dry etching of 6H-SiC in high ion density plasma tools (Inductively Coupled Plasma and Electron Cyclotron Resonance). Rates up to 4,500~"min-1 were obtained for SF6 plasmas, while much lower rates (S800~.min-') were achieved with Cl2, ICl and IBr. The F2- based chemistries have poor selectivity for SiC over photoresist masks (typically 0.4-0.5), but Ni masks are more robust, and allow etch depths 210pm in the SiC. A micromachining process (sequential etch/deposition (<2,000Angstrom min-1) for SiC steps) designed for Si produces relatively low etch rates.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1941
• Report Number(s): SAND98-2513J; ON: DE00001941
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
36 MATERIALS SCIENCE
Etching
Silicon Carbides
Chemical Reaction Kinetics
Masking