Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching
Patent
·
OSTI ID:1860076
A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.
- Research Organization:
- Univ. of New Mexico, Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AR0000869
- Assignee:
- STC.UNM (Albuqueque, NM)
- Patent Number(s):
- 11,177,126
- Application Number:
- 16/684,313
- OSTI ID:
- 1860076
- Resource Relation:
- Patent File Date: 11/14/2019
- Country of Publication:
- United States
- Language:
- English
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