Atomic layer deposition of fluoride thin films

Elam, Jeffrey W.; Mane, Anil U.; Gebhard, Sr., Michael John

Title: Atomic layer deposition of fluoride thin films

Patent · Tue Sep 07 00:00:00 EDT 2021

OSTI ID:1840416

Elam, Jeffrey W.; Mane, Anil U.; Gebhard, Sr., Michael John

A secondary electron emissive coating. The coating is formed by atomic layer deposition of CaF₂ on a substrate by ALD half cycle exposure of an alkaline metal amidinate and ALD half cycle exposure of a fluorinated compound, where the deposition occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-06CH11357

Assignee:: UChicago Argonne, LLC (Chicago, IL)

Patent Number(s):: 11,111,578

Application Number:: 16/790,559

OSTI ID:: 1840416

Resource Relation:: Patent File Date: 02/13/2020

Country of Publication:: United States

Language:: English

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