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Title: Microfabricated ion trap chip with in situ radio-frequency sensing

Patent ·
OSTI ID:1840238

A radio-frequency (RF) surface ion trap chip includes an RF electrode and an integrated capacitive voltage divider in which an intermediate voltage node is capacitively connected between the RF electrode and a ground. A sensor output trace is connected to the intermediate voltage node.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Number(s):
11,056,332
Application Number:
16/821,150
OSTI ID:
1840238
Resource Relation:
Patent File Date: 03/17/2020
Country of Publication:
United States
Language:
English

References (20)

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Design, fabrication and experimental demonstration of junction surface ion traps journal July 2011
New ion trap for frequency standard applications journal August 1989
Low-loss micromachined inverted overlay CPW lines with wide impedance ranges and inherent airbridge connection capability journal February 2001
Microfabricated Surface-Electrode Ion Trap for Scalable Quantum Information Processing journal June 2006
Electrochemically Assisted Maskless Selective Removal of Metal Layers for Three-Dimensional Micromachined SOI RF MEMS Transmission Lines and Devices journal August 2011
New micromachined microstrip transmission lines for application in millimeter-wave circuits journal January 2003
Leakage Sensor and Switch Device for Deep-Trench Capacitor Array patent-application January 2011
Apparatuses, systems, and methods for ion traps patent-application November 2016
Poly-Silicon Based Latching RF MEMS Switch journal June 2009
Low-Loss DC-100 GHz Suspended Microstrip Lines on Micromachined SiGe BiCMOS BEOL Technology journal April 2016
Capacitor Assembly For A Mass Spectrometer patent-application August 2013
A 4-bit RF MEMS phase shifter monolithically integrated with conventional CMOS conference January 2011
Selective etchant for oxide sacrificial material in semiconductor device fabrication patent May 2005
RF Power Supply for a Mass Spectrometer patent-application February 2008

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