32.9% Efficient Tandem Solar Cell with Strain-Balanced GaInAs/GaAsP Quantum Wells: Preprint

Conference · Wed Sep 22 00:00:00 EDT 2021

OSTI ID:1822822

Steiner, Myles A. ; France, Ryan M. ; Buencuerpo, Jeronimo; Geisz, John F. ; Nielsen, Michael P.; Pusch, Andreas; Olavarria, Waldo J.; Young, Michelle; Ekins-Daukes, Nicholas J.

We demonstrate single and dual junction solar cells with up to 80 strain-balanced GaInAs/GaAsP quantum wells (QWs), in order to extend the range of photon absorption. The net average stress in the quantum well layers is =12 MPa, despite coherent stresses in the individual layers that are 35-70 times greater. The GaAs-QW cell has a certified efficiency of (27.2 ± 0.2)% at one-sun; the GaInP/GaAs-QW tandem has a certified record one-sun efficiency of (32.9 ± 0.5)%. We will discuss the architecture of the devices, the physics behind the high performance, and pathways to further improvement.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1822822
• Report Number(s): NREL/CP-5900-80198; MainId:42401; UUID:0e92882d-77ad-476a-ba56-445197606450; MainAdminID:62945
• Resource Relation: Conference: Presented at the 48th IEEE Photovoltaic Specialists Conference (PVSC 48), 20-25 June 2021
• Country of Publication: United States
• Language: English

Related Subjects

SOLAR ENERGY
GaAsP
GaInAs
GaInP
III-V
photovoltaic
PV
quantum well
strain balance