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Title: Planarization of optical substrates

Patent ·
OSTI ID:1805430
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A method of making a laser mirror in which a mirror substrate has at least a one micron size nodular defect includes depositing a planarization layer over the mirror substrate and the nodular defect, depositing a layer of silicon dioxide over the planarization layer, and etching away a portion of the layer of silicon dioxide. The method also includes thereafter, depositing a layer of hafnium dioxide over the layer of silicon dioxide and repeating the steps of depositing a layer of silicon dioxide, etching away a portion of the layer of silicon dioxide, and depositing a layer of hafnium dioxide until the nodular defect is reduced in size a predetermined amount.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA); Colorado State University Research Foundation (Fort Collins, CO)
Patent Number(s):
10,901,121
Application Number:
16/183,491
OSTI ID:
1805430
Resource Relation:
Patent File Date: 11/07/2018
Country of Publication:
United States
Language:
English

References (6)

Planarization of substrate pits and scratches patent-application June 2005
Maskless fabrication of waveguide mirrors patent-application March 2005
Planarization of optical substrates patent-application October 2015
Light-emitting element and display device patent-application June 2007
Ion-assisted deposition techniques for the planarization of topological defects patent-application September 2003
Fluorine plasma treatment of high-k gate stack for defect passivation patent-application March 2008

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