Crystal truncation rods from miscut surfaces with alternating terminations

Ju, Guangxu; Xu, Dongwei; Thompson, Carol; Highland, Matthew J.; Eastman, Jeffrey A.; Walkosz, Weronika; Zapol, Peter; Stephenson, G. Brian

doi:10.1103/physrevb.103.125402

Title: Crystal truncation rods from miscut surfaces with alternating terminations

Journal Article · Tue Mar 02 00:00:00 EST 2021 · Physical Review B

DOI:https://doi.org/10.1103/physrevb.103.125402· OSTI ID:1774158

^[1]; Xu, Dongwei ^[2]; Thompson, Carol ^[3]; Highland, Matthew J. ^[4]; Eastman, Jeffrey A. ^[4]; Walkosz, Weronika ^[5]; Zapol, Peter ^[4];

^[4]

Argonne National Lab. (ANL), Lemont, IL (United States); Lumileds Lighting Co., San Jose, CA (United States)
Argonne National Lab. (ANL), Lemont, IL (United States); Huazhong Univ. of Science and Technology, Wuhan (China)
Northern Illinois Univ., DeKalb, IL (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)
Lake Forest College, Lake Forest, IL (United States)

Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crystal structures with an αβαβ stacking sequence, there have been long-standing questions regarding how the differences in adatom attachment kinetics at the steps separating the terraces affect the fractional coverage of α vs. β termination during crystal growth. To demonstrate how surface X-ray scattering can help address these questions, we develop a general theory for the intensity distributions along crystal truncation rods (CTRs) for miscut surfaces with a combination of two terminations. We consider half-unit-cell-height steps, and variation of the coverages of the terraces above each step. Example calculations are presented for the GaN (0001) surface with various reconstructions. These show which CTR positions are most sensitive to the fractional coverage of the two terminations. We compare the CTR profiles for exactly oriented surfaces to those for vicinal surfaces having a small miscut angle, and investigate the circumstances under which the CTR profile for an exactly oriented surface is equal to the sum of the intensities of the corresponding family of CTRs for a miscut surface.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1774158

Journal Information:: Physical Review B, Vol. 103, Issue 12; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

References (47)

Interlacing of growth steps on crystal surfaces as a consequence of crystallographic symmetry van Enckevort, W. J. P.; Bennema, P. Acta Crystallographica Section A Foundations of Crystallography, Vol. 60, Issue 6 https://doi.org/10.1107/S0108767304015326	journal	October 2004
Surface X-Ray Scattering during Crystal Growth: Ge on Ge(111) Vlieg, E.; van der Gon, A. W. Denier; van der Veen, J. F. Physical Review Letters, Vol. 61, Issue 19 https://doi.org/10.1103/PhysRevLett.61.2241	journal	November 1988
Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals Perret, Edith; Highland, M. J.; Stephenson, G. B. Applied Physics Letters, Vol. 105, Issue 5 https://doi.org/10.1063/1.4892349	journal	August 2014
X-ray interference method for studying interface structures Robinson, I. K.; Tung, R. T.; Feidenhans'l, R. Physical Review B, Vol. 38, Issue 5 https://doi.org/10.1103/PhysRevB.38.3632	journal	August 1988
In situ x-ray scattering study of PbTiO3 chemical-vapor deposition Murty, M. V. Ramana; Streiffer, S. K.; Stephenson, G. B. Applied Physics Letters, Vol. 80, Issue 10 https://doi.org/10.1063/1.1458530	journal	March 2002
Modelling the growth of nitrides in ammonia-rich environment Krukowski, S.; Kempisty, P.; Strąk, P. Crystal Research and Technology, Vol. 42, Issue 12 https://doi.org/10.1002/crat.200711019	journal	December 2007
Dynamical Diffraction of X Rays by Perfect Crystals Batterman, Boris W.; Cole, Henderson Reviews of Modern Physics, Vol. 36, Issue 3 https://doi.org/10.1103/RevModPhys.36.681	journal	July 1964
Surfactant-induced layer-by-layer growth of Ag on Ag(111) van der Vegt, H. A.; van Pinxteren, H. M.; Lohmeier, M. Physical Review Letters, Vol. 68, Issue 22 https://doi.org/10.1103/PhysRevLett.68.3335	journal	June 1992
Crystal truncation rods and surface roughness Robinson, I. K. Physical Review B, Vol. 33, Issue 6 https://doi.org/10.1103/PhysRevB.33.3830	journal	March 1986
Observation of growth modes during metal-organic chemical vapor deposition of GaN Stephenson, G. B.; Eastman, J. A.; Thompson, C. Applied Physics Letters, Vol. 74, Issue 22 https://doi.org/10.1063/1.123333	journal	May 1999
Crystallographic Formulae for Hexagonal Lattices Otte, H. M.; Crocker, A. G. physica status solidi (b), Vol. 9, Issue 2 https://doi.org/10.1002/pssb.19650090217	journal	January 1965
Modes of vibrations in step trains: Rhythmical bunching Sunagawa, I.; Bennema, P. Journal of Crystal Growth, Vol. 46, Issue 3 https://doi.org/10.1016/0022-0248(79)90095-2	journal	March 1979
Calculation of x-ray-diffraction profiles from vicinal surfaces Held, G. A.; Brock, J. D. Physical Review B, Vol. 51, Issue 11 https://doi.org/10.1103/PhysRevB.51.7262	journal	March 1995
Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces Xu, Dongwei; Zapol, Peter; Stephenson, G. Brian The Journal of Chemical Physics, Vol. 146, Issue 14 https://doi.org/10.1063/1.4979843	journal	April 2017
Scattering of X-rays from crystal surfaces Andrews, S. R.; Cowley, R. A. Journal of Physics C: Solid State Physics, Vol. 18, Issue 35 https://doi.org/10.1088/0022-3719/18/35/008	journal	December 1985
Step and island dynamics at solid/vacuum and solid/liquid interfaces Giesen, Margret Progress in Surface Science, Vol. 68, Issue 1-3 https://doi.org/10.1016/S0079-6816(00)00021-6	journal	September 2001
Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions Załuska-Kotur, Magdalena A.; Krzyżewski, Filip; Krukowski, Stanisław Journal of Applied Physics, Vol. 109, Issue 2 https://doi.org/10.1063/1.3536516	journal	January 2011
Metallicity of InN and GaN surfaces exposed to NH $_{3}$ Walkosz, Weronika; Zapol, Peter; Stephenson, G. Brian Physical Review B, Vol. 85, Issue 3 https://doi.org/10.1103/PhysRevB.85.033308	journal	January 2012
Time-resolved x-ray scattering studies of layer-by-layer epitaxial growth Fuoss, P. H.; Kisker, D. W.; Lamelas, F. J. Physical Review Letters, Vol. 69, Issue 19 https://doi.org/10.1103/PhysRevLett.69.2791	journal	November 1992
CI. Observations on carborundum of growth spirals originating from screw dislocations Verma, Ajit Ram The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, Vol. 42, Issue 332 https://doi.org/10.1080/14786445108561345	journal	September 1951
Anisotropic Step-Flow Growth and Island Growth of GaN(0001) by Molecular Beam Epitaxy Xie, M. H.; Seutter, S. M.; Zhu, W. K. Physical Review Letters, Vol. 82, Issue 13 https://doi.org/10.1103/PhysRevLett.82.2749	journal	March 1999
Ab initio study for adsorption and desorption behavior at step edges of AlN(0001) and GaN(0001) surfaces Akiyama, Toru; Ohka, Takumi; Nakamura, Kohji Japanese Journal of Applied Physics, Vol. 59, Issue SG https://doi.org/10.7567/1347-4065/ab6566	journal	February 2020
Interpretation of double spirals on silicon carbide van der Hoek, B.; van der Eerden, J. P.; Tsukamoto, K. Journal of Crystal Growth, Vol. 58, Issue 3 https://doi.org/10.1016/0022-0248(82)90142-7	journal	August 1982
Dislocation mediated surface morphology of GaN Heying, B.; Tarsa, E. J.; Elsass, C. R. Journal of Applied Physics, Vol. 85, Issue 9 https://doi.org/10.1063/1.370150	journal	May 1999
Ab initio study for adsorption and desorption behavior at step edges of GaN(0001) surface Akiyama, Toru; Ohka, Takumi; Nakamura, Kohji Journal of Crystal Growth, Vol. 532 https://doi.org/10.1016/j.jcrysgro.2019.125410	journal	February 2020
Lattice kinetic Monte Carlo simulation study of the early stages of epitaxial GaN(0001) growth Chugh, Manjusha; Ranganathan, Madhav Applied Surface Science, Vol. 422 https://doi.org/10.1016/j.apsusc.2017.06.067	journal	November 2017
Calculation of crystal truncation rod structure factors for arbitrary rational surface terminations Trainor, Thomas P.; Eng, Peter J.; Robinson, Ian K. Journal of Applied Crystallography, Vol. 35, Issue 6 https://doi.org/10.1107/S0021889802013985	journal	November 2002
General discussion Robinson, I. K.; Villain, J.; Vilfan, I. Faraday Discussions of the Chemical Society, Vol. 89 https://doi.org/10.1039/dc9908900201	journal	January 1990
Kinetic energy barriers on the GaN(0001) surface: A nucleation study by scanning tunneling microscopy Zheng, Hao; Xie, M. H.; Wu, H. S. Physical Review B, Vol. 77, Issue 4 https://doi.org/10.1103/PhysRevB.77.045303	journal	January 2008
Surface morphology of GaN grown by molecular beam epitaxy Vézian, S.; Massies, J.; Semond, F. Materials Science and Engineering: B, Vol. 82, Issue 1-3 https://doi.org/10.1016/S0921-5107(00)00707-8	journal	May 2001
Origin of triangular island shape and double-step bunching during GaN growth by molecular-beam epitaxy under excess Ga conditions Xie, M. H.; Gong, M.; Pang, E. K. Y. Physical Review B, Vol. 74, Issue 8 https://doi.org/10.1103/PhysRevB.74.085314	journal	August 2006
Influence of miscut on crystal truncation rod scattering Munkholm, A.; Brennan, S. Journal of Applied Crystallography, Vol. 32, Issue 2 https://doi.org/10.1107/S0021889898005159	journal	April 1999
X-Ray Interactions: Photoabsorption, Scattering, Transmission, and Reflection at E = 50-30,000 eV, Z = 1-92 Henke, B. L.; Gullikson, E. M.; Davis, J. C. Atomic Data and Nuclear Data Tables, Vol. 54, Issue 2, p. 181-342 https://doi.org/10.1006/adnd.1993.1013	journal	July 1993
Diffraction from disordered vicinal surfaces with alternating terraces Wollschläger, Joachim; Tegenkamp, Christoph Physical Review B, Vol. 75, Issue 24 https://doi.org/10.1103/PhysRevB.75.245439	journal	June 2007
Termination interference along crystal truncation rods of layered crystals Fenter, Paul; Park, Changyong Journal of Applied Crystallography, Vol. 37, Issue 6 https://doi.org/10.1107/S0021889804024343	journal	November 2004
Morphology evolution of ZnO(000 1̄) surface during plasma-assisted molecular-beam epitaxy Chen, Yefan; Ko, Hang-Ju; Hong, Soon-Ku Applied Physics Letters, Vol. 80, Issue 8 https://doi.org/10.1063/1.1454229	journal	February 2002
Nucleus and Spiral Growth of N-face GaN(0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy Lin, Chia-Hung; Akasaka, Tetsuya; Yamamoto, Hideki Applied Physics Express, Vol. 6, Issue 3 https://doi.org/10.7567/APEX.6.035503	journal	March 2013
Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers Turski, H.; Siekacz, M.; Wasilewski, Z. R. Journal of Crystal Growth, Vol. 367 https://doi.org/10.1016/j.jcrysgro.2012.12.026	journal	March 2013
Measurements of Surface Diffusivity and Coarsening during Pulsed Laser Deposition Ferguson, J. D.; Arikan, G.; Dale, D. S. Physical Review Letters, Vol. 103, Issue 25 https://doi.org/10.1103/PhysRevLett.103.256103	journal	December 2009
Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy: Surface reconstructions of (0001) AlN during MOVPE Pristovsek, Markus; Bellman, Konrad; Mehnke, Frank physica status solidi (b), Vol. 254, Issue 8 https://doi.org/10.1002/pssb.201600711	journal	June 2017
Thermal expansion of polycrystalline gallium nitride: an X-ray diffraction study: Thermal expansion of polycrystalline gallium nitride Minikayev, R.; Paszkowicz, W.; Piszora, P. X-Ray Spectrometry, Vol. 44, Issue 5 https://doi.org/10.1002/xrs.2644	journal	July 2015
A comparison of surface roughness as measured by atomic force microscopy and x-ray scattering Munkholm, A.; Brennan, S.; Carr, E. C. Journal of Applied Physics, Vol. 82, Issue 6 https://doi.org/10.1063/1.366129	journal	September 1997
Crystal truncation rods from miscut surfaces Petach, Trevor A.; Mehta, Apurva; Toney, Michael F. Physical Review B, Vol. 95, Issue 18 https://doi.org/10.1103/PhysRevB.95.184104	journal	May 2017
Surface patterns due to step flow anisotropy formed in crystal growth process Załuska-Kotur, Magdalena A.; Krzyżewski, Filip; Krukowski, Stanisław Journal of Non-Crystalline Solids, Vol. 356, Issue 37-40 https://doi.org/10.1016/j.jnoncrysol.2010.05.029	journal	August 2010
Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation Stampfl, C.; Van de Walle, C. G. Physical Review B, Vol. 59, Issue 8 https://doi.org/10.1103/PhysRevB.59.5521	journal	February 1999
Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology Zauner, A. R. A.; Aret, E.; van Enckevort, W. J. P. Journal of Crystal Growth, Vol. 240, Issue 1-2 https://doi.org/10.1016/S0022-0248(01)02389-2	journal	April 2002
Observation of the polarization of domains in ferroelectric thin films using x-ray interference Thompson, Carol; Foster, Christopher M.; Eastman, Jeffrey A. Applied Physics Letters, Vol. 71, Issue 24 https://doi.org/10.1063/1.120377	journal	December 1997

Similar Records

Crystal truncation rods from miscut surfaces

Journal Article · Mon May 08 00:00:00 EDT 2017 · Physical Review B · OSTI ID:1774158

Petach, Trevor A.; Mehta, Apurva; Toney, Michael F.; +1 more

Burton-Cabrera-Frank theory for surfaces with alternating step types

Journal Article · Tue Feb 22 00:00:00 EST 2022 · Physical Review B · OSTI ID:1774158

Ju, Guangxu; Xu, Dongwei; Thompson, Carol; +5 more

X-ray truncation rod analysis of Cu thin film on c-plane sapphire

Book · Tue Dec 31 00:00:00 EST 1996 · OSTI ID:1774158

Chung, K S; Hong, H; Aburano, R D; +3 more

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
Growth
growth processes
interfaces
semiconductor compounds
solid-gas interfaces
x-ray diffraction
x-ray scattering

Title: Crystal truncation rods from miscut surfaces with alternating terminations

Citation Formats

References (47)

Similar Records

Related Subjects