Chalcogen back surface field layer
Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.
- Research Organization:
- International Business Machines Corp., Armonk, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0006334
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Number(s):
- 10,790,398
- Application Number:
- 16/009,098
- OSTI ID:
- 1735322
- Resource Relation:
- Patent File Date: 06/14/2018
- Country of Publication:
- United States
- Language:
- English
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