Atomic Structure and Properties of Extended Defects in Silicon

Conference · Thu Oct 15 00:00:00 EDT 1998

OSTI ID:1710

Buczko, R; Chisholm, M F; Kaplan, T; Maiti, A; Mostoller, M; Pantelides, S T; Pennycook, S J

The Z-contrast technique represents a new approach to high-resolution electron microscopy allowing for the first time incoherent imaging of materials on the atomic scale. The key advantages of the technique, an intrinsically higher resolution limit and directly interpretable, compositionally sensitive imaging, allow a new level of insight into the atomic configurations of extended defects in silicon. This experimental technique has been combined with theoretical calculations (a combination of first principles, tight binding, and classical methods) to extend this level of insight by obtaining the energetic and electronic structure of the defects.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Oak Ridge, TN
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 1710
• Report Number(s): ORNL/CP-100178; ON: DE00001710
• Resource Relation: Conference: 5th International Conference on Polycrystalline Semiconductors, Schwabisch-Gmund, Germany, September 13-18, 1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Transmission Electron Microscopy
Electronic Structure
Dislocations