Transition radiation light sources
Patent
·
OSTI ID:1637771
Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.
- Research Organization:
- Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-06OR23177
- Assignee:
- BNNT, LLC (Newport News, VA)
- Patent Number(s):
- 10,607,829
- Application Number:
- 16/330,218
- OSTI ID:
- 1637771
- Resource Relation:
- Patent File Date: 09/06/2017
- Country of Publication:
- United States
- Language:
- English
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