Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs

Espenlaub, Andrew C.; Myers, Daniel J.; Young, Erin C.; Marcinkevičius, Saulius; Weisbuch, Claude; Speck, James S.

doi:10.1063/1.5096773

Title: Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs

Abstract

By studying low radiative efficiency blue III-nitride light emitting diodes (LEDs), we find that the ABC model of recombination commonly used for understanding efficiency behavior in LEDs is insufficient and that additional effects should be taken into account. We propose a modification to the standard recombination model by incorporating a bimolecular nonradiative term. The modified model is shown to be in much better agreement with the radiative efficiency data and to be more consistent than the conventional model with very short carrier lifetimes measured by time-resolved photoluminescence in similar, low radiative efficiency material. Here, we present experimental evidence that a hot carrier-generating process is occurring within these devices, in the form of measurements of forward photocurrent under forward bias. The forward photocurrent, due to hot carrier generation in the active region, is present despite the lack of any "efficiency droop"-the usual signature of band-to-band Auger recombination in high-quality III-nitride LEDs. Hot carrier generation in the absence of band-to-band Auger recombination implies that some other source of hot carriers exists within these low radiative efficiency devices, such as trap-assisted Auger recombination.

Authors:

^[1];

^[2]; Weisbuch, Claude ^[3]; Speck, James S. ^[1]

Univ. of California, Santa Barbara, CA (United States)
KTH Royal Institute of Technology, Kista (Sweden)
Univ. of California, Santa Barbara, CA (United States); Ecole Polytechnique, Palaiseau (France)

Publication Date:: Mon Nov 11 00:00:00 EST 2019

Research Org.:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office; Swedish Energy Agency

Contributing Org.:: KTH - Royal Institute of Technology (Stockholm, Sweden)

OSTI Identifier:: 1635224

Alternate Identifier(s):: OSTI ID: 1573867

Grant/Contract Number:: EE0007096; 45390-1

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 126; Journal Issue: 18; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Light emitting diodes; solid state lighting; Auger effect; photoexcitations; nitrides; recombination reactions; time-resolved photoluminescence; semiconductors

Citation Formats


                    Espenlaub, Andrew C., Myers, Daniel J., Young, Erin C., Marcinkevičius, Saulius, Weisbuch, Claude, and Speck, James S. Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs.  United States: N. p., 2019. 
        Web.  doi:10.1063/1.5096773.

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                    Espenlaub, Andrew C., Myers, Daniel J., Young, Erin C., Marcinkevičius, Saulius, Weisbuch, Claude, & Speck, James S. Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs.  United States.  https://doi.org/10.1063/1.5096773

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                    Espenlaub, Andrew C., Myers, Daniel J., Young, Erin C., Marcinkevičius, Saulius, Weisbuch, Claude, and Speck, James S. 2019.  
        "Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs".  United States.  https://doi.org/10.1063/1.5096773.  https://www.osti.gov/servlets/purl/1635224.

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@article{osti_1635224,

  title        = {Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs},

  author       = {Espenlaub, Andrew C. and Myers, Daniel J. and Young, Erin C. and Marcinkevičius, Saulius and Weisbuch, Claude and Speck, James S.},

  abstractNote = {By studying low radiative efficiency blue III-nitride light emitting diodes (LEDs), we find that the ABC model of recombination commonly used for understanding efficiency behavior in LEDs is insufficient and that additional effects should be taken into account. We propose a modification to the standard recombination model by incorporating a bimolecular nonradiative term. The modified model is shown to be in much better agreement with the radiative efficiency data and to be more consistent than the conventional model with very short carrier lifetimes measured by time-resolved photoluminescence in similar, low radiative efficiency material. Here, we present experimental evidence that a hot carrier-generating process is occurring within these devices, in the form of measurements of forward photocurrent under forward bias. The forward photocurrent, due to hot carrier generation in the active region, is present despite the lack of any "efficiency droop"-the usual signature of band-to-band Auger recombination in high-quality III-nitride LEDs. Hot carrier generation in the absence of band-to-band Auger recombination implies that some other source of hot carriers exists within these low radiative efficiency devices, such as trap-assisted Auger recombination.},

  doi          = {10.1063/1.5096773},

  url          = {https://www.osti.gov/biblio/1635224},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 18,

  volume       = 126,

  place        = {United States},

  year         = {Mon Nov 11 00:00:00 EST 2019},

  month        = {Mon Nov 11 00:00:00 EST 2019}

}

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Title: Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs

Abstract

Citation Formats

Impact ionisation and Auger recombination involving traps in semiconductors journal, April 1980

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy journal, November 2016

Auger recombination with traps in quantum-well semiconductors journal, June 1993

Photocharging ZnO Nanocrystals: Picosecond Hole Capture, Electron Accumulation, and Auger Recombination journal, September 2012

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop journal, April 2013

Auger recombination and impact ionization involving traps in semiconductors journal, December 1964

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes journal, April 2017

Auger Recombination with Traps journal, February 1980

Experimental proof of impurity Auger recombination in silicon journal, December 1985

Simulation of light-emitting diodes for new physics understanding and device design conference, February 2012

Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting journal, June 2007

Auger Recombination of Electrons via Deep and Shallow Acceptors journal, November 1985

Theory of Donor-Acceptor Radiative and Auger Recombination in Simple Semiconductors journal, September 1973

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes journal, September 2010

Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes journal, July 2010

High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate journal, August 2013

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes journal, April 2018

On the Monte Carlo Description of Hot Carrier Effects and Device Characteristics of III-N LEDs journal, February 2017

The first 70 semiconductor Auger processes journal, November 1978

Trap-assisted recombination in semiconductors: application to group III gallium nitride material and junctions journal, June 2001

Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells journal, November 2015

Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes journal, August 2018

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes journal, February 2008

Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes journal, September 2014

Auger Recombination with Deep Impurities in Indirect Band Gap Semiconductors journal, December 1981

Nonradiative recombination via deep impurity levels in semiconductors: The excitonic Auger mechanism journal, February 1988

Size-Dependent Trap-Assisted Auger Recombination in Semiconductor Nanocrystals journal, March 2013

Auger effect involving recombination centres journal, February 1964

Quantitative Multi-Scale, Multi-Physics Quantum Transport Modeling of GaN-Based Light Emitting Diodes journal, December 2017

Multiphonon broadening of impact ionisation and Auger recombination involving traps in semiconductors journal, July 1983

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop text, January 2013

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes text, January 2017

Impact ionisation and Auger recombination involving traps in semiconductors
journal, April 1980

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy
journal, November 2016

Auger recombination with traps in quantum-well semiconductors
journal, June 1993

Photocharging ZnO Nanocrystals: Picosecond Hole Capture, Electron Accumulation, and Auger Recombination
journal, September 2012

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
journal, April 2013

Auger recombination and impact ionization involving traps in semiconductors
journal, December 1964

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
journal, April 2017

Auger Recombination with Traps
journal, February 1980

Experimental proof of impurity Auger recombination in silicon
journal, December 1985

Simulation of light-emitting diodes for new physics understanding and device design
conference, February 2012

Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
journal, June 2007

Auger Recombination of Electrons via Deep and Shallow Acceptors
journal, November 1985

Theory of Donor-Acceptor Radiative and Auger Recombination in Simple Semiconductors
journal, September 1973

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
journal, September 2010

Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
journal, July 2010

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journal, August 2013

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes
journal, April 2018

On the Monte Carlo Description of Hot Carrier Effects and Device Characteristics of III-N LEDs
journal, February 2017

The first 70 semiconductor Auger processes
journal, November 1978

Trap-assisted recombination in semiconductors: application to group III gallium nitride material and junctions
journal, June 2001

Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells
journal, November 2015

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journal, February 1988

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journal, March 2013

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journal, February 1964

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text, January 2013

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
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