Grain boundary structure of two-dimensional tellurium revealed by 4D STEM
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
The recent realization of 2D tellurium (tellurene) has allowed scientists to demonstrate an air-stable monoelemental van der Waals material with remarkable potential for applications in electronics and optoelectronics. The chiral-chain structure of ultrathin Te allows controllable electronic and optical properties due to the non-monotonic carrier mobility and an increase in electronic band-gap as the thickness is reduced. Scalable and accurate production of 2D Te-based functional devices will require detailed knowledge of structural defects and strain field distributions that can be linked to transport properties.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program
- DOE Contract Number:
- 89233218CNA000001; 20190516ECR
- OSTI ID:
- 1630845
- Report Number(s):
- LA-UR-20-23819
- Country of Publication:
- United States
- Language:
- English
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