skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Interfacial properties of penta-graphene-metal contacts

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.5085414· OSTI ID:1610324
 [1];  [1];  [1];  [2];  [3]
  1. Peking Univ., Beijing (China)
  2. Tohoku Univ., Sendai (Japan)
  3. Virginia Commonwealth Univ., Richmond, VA (United States)

Novel properties of penta-graphene (PG) have stimulated great interest in exploring its potential for device applications. Here, we systematically study the interfacial properties of the heterojunctions constructed by stacking PG on several metal substrates (Ag, Al, Au, Cr, Cu, Pd, and Ti), which are commonly used in field-effect transistors. We consider PG as the channel material because of its semiconducting feature, while treating the metal surfaces as the electrodes. Based on first principles calculations, we show that PG preserves its pentagonal feature with some small distortions when deposited on the metal substrates but undergoes metallization due to the chemical bonding between PG and the metal surfaces. We evaluate the device potential of these PG-metal contacts by studying their tunneling barriers, orbital overlaps, and Schottky barriers. Here, we find that PG forms an n-type Schottky barrier when in contact with Al, Cu, and Ti, but forms a p-type Schottky barrier when supported on Ag, Au, Cr, and Pd. Our study sheds light on the design and fabrication of PG-based electronic devices.

Research Organization:
Virginia Commonwealth Univ., Richmond, VA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); National Key Research and Development Program of China
Grant/Contract Number:
FG02-96ER45579; NSFC-21773004; 2016YFE0127300; 2017YFA0205003
OSTI ID:
1610324
Journal Information:
Journal of Applied Physics, Vol. 125, Issue 6; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 9 works
Citation information provided by
Web of Science

References (29)

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors journal July 2014
Generalized Gradient Approximation Made Simple journal October 1996
Computing the band structure and energy gap of penta-graphene by using DFT and G0W0 approximations journal March 2016
A theoretical model for metal–graphene contact resistance using a DFT–NEGF method journal January 2013
Projector augmented-wave method journal December 1994
Band gap engineering in penta-graphene by substitutional doping: first-principles calculations journal September 2016
Special points for Brillouin-zone integrations journal June 1976
A new carbon allotrope: Penta-graphene as a metal-free catalyst for CO oxidation journal April 2017
Mechanical properties of monolayer penta-graphene and phagraphene: a first-principles study journal January 2016
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Ferroelectric Schottky Diode journal October 1994
Tight-binding approach to penta-graphene journal March 2016
An all-carbon vdW heterojunction composed of penta-graphene and graphene: Tuning the Schottky barrier by electrostatic gating or nitrogen doping journal August 2017
First-principles study of the interaction and charge transfer between graphene and metals journal May 2009
Monolayer Phosphorene–Metal Contacts journal March 2016
Schottky-Barrier-Free Contacts with Two-Dimensional Semiconductors by Surface-Engineered MXenes journal December 2016
Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions journal April 2013
2D halide perovskite-based van der Waals heterostructures: contact evaluation and performance modulation journal July 2017
Lattice thermal conductivity of penta-graphene journal August 2016
A Study on Graphene—Metal Contact journal March 2013
Mechanical properties of penta-graphene, hydrogenated penta-graphene, and penta-CN 2 sheets journal August 2017
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS 2 Interfaces journal March 2014
Penta-graphene: A new carbon allotrope journal February 2015
Hydrogenation of Penta-Graphene Leads to Unexpected Large Improvement in Thermal Conductivity journal May 2016
Single-layer MoS2 transistors journal January 2011
Graphdiyne–metal contacts and graphdiyne transistors journal January 2015
Weak interlayer dependence of lattice thermal conductivity on stacking thickness of penta-graphene journal November 2017
High Performance Multilayer MoS2Transistors with Scandium Contacts journal December 2012
Disparate Strain Dependent Thermal Conductivity of Two-dimensional Penta-Structures journal May 2016