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Title: Stoichiometry control and electronic and transport properties of pyrochlore B i 2 I r 2 O 7 thin films

Journal Article · · Physical Review Materials
 [1];  [2];  [3];  [4];  [5];  [3];  [5];  [5];  [6];  [1];  [3];  [5];  [1]
  1. Indiana Univ., Bloomington, IN (United States)
  2. Shenzhen Univ. (China)
  3. Purdue Univ., West Lafayette, IN (United States)
  4. Univ. of Maryland, College Park, MD (United States)
  5. Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
  6. Univ. at Buffalo - The State Univ. of New York, Buffalo, NY (United States); Konkuk Univ., Seoul (Korea)

Synthesizing stoichiometric and epitaxial thin films of pyrochlore iridates is an essential step toward the experimental realization of unusual topological and magnetic states that are theoretically predicted in this unique spin-orbit coupled material system. Here, we report on the stoichiometry control and electronic and transport properties of pyrochlore iridate Bi2Ir2O7 thin films grown by pulsed laser deposition. The as-grown films form a bilayerlike structure, in which the top surface is highly Ir deficient while the bottom layer is mainly composed of iridium metal. By postannealing the as-deposited films in Ir O2 + O2 atmosphere, we improved the stoichiometry and homogeneity through the film thickness with the lattice constant close to the bulk value. Density functional theory calculation in the bulk limit shows a fourfold degenerate Dirac node slightly below the Fermi energy at the X point, along with trivial bands around the Γ point. The projected partial density of states suggests that the states in the vicinity of the Fermi energy (–3 to 0 eV) mainly consist of highly hybridized Ir 5d and O 2p with minor contributions from Bi 6s and 6p,while those far below the Fermi energy (–9 to –3 eV) are contributed primarily by the O bands. Transport measurements revealed a weakly metallic behavior at higher temperatures transitioning to a weakly insulating behavior below 150 K, and a low-temperature magnetoresistance qualitatively ascribed to multicarrier and band-structural effects. Here, the transport features are influenced by a density of states sharply peaked at the Fermi energy, and by the coexistence of trivial bands with the Dirac node, as revealed by the density functional theory calculations.

Research Organization:
Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
Grant/Contract Number:
FG02-08ER46532; CHE1048613
OSTI ID:
1610008
Alternate ID(s):
OSTI ID: 1483029
Journal Information:
Physical Review Materials, Vol. 2, Issue 11; ISSN 2475-9953
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

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Figures / Tables (7)


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