Suppression of the antiferromagnetic metallic state in the pressurized MnBi2Te4 single crystal

Chen, K. Y.; Yan, Jiaqiang; Parker, David S.; Zhou, Jianshi; Uwatoko, Y.; Cheng, Jinguang

doi:10.1103/PhysRevMaterials.3.094201

Title: Suppression of the antiferromagnetic metallic state in the pressurized $MnB i_{2} T e_{4}$ single crystal

Journal Article · Tue Sep 03 00:00:00 EDT 2019 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.3.094201· OSTI ID:1606901

Chen, K. Y. ^[1];

^[2];

^[3]; Zhou, Jianshi ^[3]; Uwatoko, Y. ^[4];

^[5]

Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences
Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences; Songshan Lake Materials Lab., Dongguan, Guangdong (China)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Univ. of Texas, Austin, TX (United States). Inst. for Solid State Physics
Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics; Univ. of Tokyo (Japan). Inst. for Solid State Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences; Songshan Lake Materials Lab., Dongguan, G

We study the effect of hydrostatic pressure on the electrical transport, magnetic, and structural properties of $MnB i_{2} T e_{4}$ by measuring its resistivity, Hall effect, and x-ray diffraction under pressures up to 12.8 GPa supplemented by the first-principles calculations. At ambient pressure, $MnB i_{2} T e_{4}$ shows a metallic conducting behavior with a cusplike anomaly at around T_N ≈ 24 K, where it undergoes a long-range antiferromagnetic (AF) transition. With increasing pressure, T_N determined from the resistivity anomaly first increases slightly with a maximum at around 2 GPa and then decreases until vanishing completely at about 7 GPa. Intriguingly, its resistivity is enhanced gradually by pressure and even evolves from metallic to semimetal or semiconductinglike behavior as T_N is suppressed. However, the density of the n-type charge carrier that remains dominant under pressure increases with pressure. In addition, the interlayer AF coupling seems to be strengthened under compression, since the critical field H c 1 for the spin-flop transition to the canted AF state is found to increase with pressure. No structural transition was evidenced up to 12.8 GPa, but some lattice softening was observed at about 2 GPa, signaling the occurrence of an electronic transition or crossover from a localized to itinerant state. Finally, we have rationalized these experimental findings by considering the pressure-induced enhancement of antiferromagnetic/ferromagnetic competition and partial delocalization of Mn-3 d electrons, which not only destroys long-range AF order but also promotes charge-carrier localization through enhanced spin fluctuations and/or the formation of a hybridization gap at high pressure.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); National Key Research and Development Program of China; National Science Foundation (NSF)

Grant/Contract Number:: AC05-00OR22725; DMR-1729588; 2018YFA0305700; 2018YFA0305800; 11574377; 11888101; 11834016; 11874400; XDB25000000; QYZDB-SSW-SLH013

OSTI ID:: 1606901

Alternate ID(s):: OSTI ID: 1560315

Journal Information:: Physical Review Materials, Vol. 3, Issue 9; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 44 works

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Title: Suppression of the antiferromagnetic metallic state in the pressurized $MnB i_{2} T e_{4}$ single crystal