Ta, Ti and Hf effects on Nb3Sn high-field performance: temperature-dependent dopant occupancy and failure of Kramer extrapolation

Tarantini, Chiara; Balachandran, Shreyas; Heald, Steve M.; Lee, Peter J.; Paudel, Nawaraj; Choi, Eun Sang; Starch, William L.; Larbalestier, David C.

doi:10.1088/1361-6668/ab4d9e

Title: Ta, Ti and Hf effects on Nb₃Sn high-field performance: temperature-dependent dopant occupancy and failure of Kramer extrapolation

Journal Article · Mon Nov 04 00:00:00 EST 2019 · Superconductor Science and Technology

DOI:https://doi.org/10.1088/1361-6668/ab4d9e· OSTI ID:1593300

^[1];

^[1]; Heald, Steve M. ^[2];

^[1]; Paudel, Nawaraj ^[1]; Choi, Eun Sang ^[1]; Starch, William L. ^[1];

^[1]

Florida State Univ., Tallahassee, FL (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)

The increasing demand for improving the high-field (16-22 T) performance of Nb₃Sn conductors requires a better understanding of the properties of modern wires much closer to irreversibility field, H _Irr. In this study we investigated the impact of Ta, Ti and Hf doping on the high-field pinning properties, the upper critical field, H _c2, and H _Irr. We found that the pinning force curves of commercial Ti and Ta doped wires at different temperatures do not scale and that the Kramer extrapolation, typically used by magnet designers to estimate high-field critical current density and magnet operational margins from lower field data, is not reliable and significantly overestimates the actual H _Irr. In contrast, new laboratory scale conductors made with Nb-Ta-Hf alloy have improved high-field J _c performance and, despite contributions by both grain boundary and point defect pinning mechanisms, have more predictable high-field behavior. Using Extended X-ray Absorption Fine Structure spectroscopy, EXAFS, we found that for the commercial Ta and Ti doped conductors, the Ta site occupancy in the A15 structure gradually changes with the heat treatment temperature whereas Ti is always located on the Nb site with clear consequences for H _c2. Finally, this work reveals the still limited understanding of what determines H _c2, H _Irr and the high-field J _c performance of Nb₃Sn and the complexity of optimizing these conductors so that they can reach their full potential for high-field applications.

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Research Organization:: Florida State Univ., Tallahassee, FL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), High Energy Physics (HEP); CERN; National Science Foundation (NSF); State of Florida; Canadian Light Source; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division

Grant/Contract Number:: SC0012083; AC02-06CH11357; DMR-1644779

OSTI ID:: 1593300

Alternate ID(s):: OSTI ID: 1607426

Journal Information:: Superconductor Science and Technology, Vol. 32, Issue 12; ISSN 0953-2048

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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References (32)

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Title: Ta, Ti and Hf effects on Nb3Sn high-field performance: temperature-dependent dopant occupancy and failure of Kramer extrapolation

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