Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1– xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy

Liu, Shi; Zhao, Xin -Hao; Campbell, Calli M.; Lassise, Maxwell B.; Zhao, Yuan; Zhang, Yong -Hang

doi:10.1063/1.4927757

Title: Carrier lifetimes and interface recombination velocities in CdTe/Mg_xCd_1– _xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy

Journal Article · Mon Jul 27 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4927757· OSTI ID:1579851

^[1]; Zhao, Xin -Hao ^[1]; Campbell, Calli M. ^[1]; Lassise, Maxwell B. ^[1]; Zhao, Yuan ^[1]; Zhang, Yong -Hang ^[1]

Arizona State Univ., Tempe, AZ (United States)

The interface recombination velocities of CdTe/Mg_xCd_1–xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg_0.46Cd_0.54Te interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. As a result, the impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Stanford Univ., Stamfprd, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: EE0004946; FA9550-12-1-0444

OSTI ID:: 1579851

Journal Information:: Applied Physics Letters, Vol. 107, Issue 4; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 17 works

Citation information provided by
Web of Science

References (18)

Time-resolved and excitation-dependent photoluminescence study of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy Zhao, Xin-Hao; DiNezza, Michael J.; Liu, Shi Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 4 https://doi.org/10.1116/1.4878317	journal	July 2014
Evaluation of the CdS/CdTe heterojunction solar cell Mitchell, Kim W.; Fahrenbruch, Alan L.; Bube, Richard H. Journal of Applied Physics, Vol. 48, Issue 10 https://doi.org/10.1063/1.323429	journal	October 1977
Influence of photon recycling on semiconductor luminescence refrigeration Wang, J. -B.; Johnson, S. R.; Ding, D. Journal of Applied Physics, Vol. 100, Issue 4 https://doi.org/10.1063/1.2219323	journal	August 2006
Surface Passivation of CdTe Single Crystals Reese, Matthew O.; Burst, James M.; Perkins, Craig L. IEEE Journal of Photovoltaics, Vol. 5, Issue 1 https://doi.org/10.1109/JPHOTOV.2014.2362298	journal	January 2015
Wide gap Cd1−xMgxTe: molecular beam epitaxial growth and characterization Waag, A.; Fischer, F.; Litz, Th. Journal of Crystal Growth, Vol. 138, Issue 1-4 https://doi.org/10.1016/0022-0248(94)90798-6	journal	April 1994
Radiative and interfacial recombination in CdTe heterostructures Swartz, C. H.; Edirisooriya, M.; LeBlanc, E. G. Applied Physics Letters, Vol. 105, Issue 22 https://doi.org/10.1063/1.4902926	journal	December 2014
Thermionic emission and Gaussian transport of holes in a GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As multiple-quantum-well structure Schneider, H.; Klitzing, K. v. Physical Review B, Vol. 38, Issue 9 https://doi.org/10.1103/PhysRevB.38.6160	journal	September 1988
Optical investigation of confinement and strain effects in CdTe/(CdMg)Te quantum wells Kuhn‐Heinrich, B.; Ossau, W.; Heinke, H. Applied Physics Letters, Vol. 63, Issue 21 https://doi.org/10.1063/1.110277	journal	November 1993
Unusually low surface recombination and long bulk lifetime in n -CdTe single crystals Cohen, R.; Lyahovitskaya, V.; Poles, E. Applied Physics Letters, Vol. 73, Issue 10 https://doi.org/10.1063/1.122169	journal	September 1998
Ultralow recombination velocity at Ga _0.5 In _0.5 P/GaAs heterointerfaces Olson, J. M.; Ahrenkiel, R. K.; Dunlavy, D. J. Applied Physics Letters, Vol. 55, Issue 12 https://doi.org/10.1063/1.101656	journal	September 1989
Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy DiNezza, Michael J.; Zhao, Xin-Hao; Liu, Shi Applied Physics Letters, Vol. 103, Issue 19 https://doi.org/10.1063/1.4828984	journal	November 2013
Influence of the thiourea/CdCl2 concentration ratio used for the chemical bath deposition of CdS thin films, upon the CdS/CdTe interface recombination velocity in CdTe/CdS/glass structures. Marín, E.; Santoyo, J.; Calderón, A. Journal of Applied Physics, Vol. 107, Issue 12 https://doi.org/10.1063/1.3431534	journal	June 2010
Very low interface recombination velocity in (Al,Ga)As heterostructures grown by organometallic vapor‐phase epitaxy Molenkamp, L. W.; van’t Blik, H. F. J. Journal of Applied Physics, Vol. 64, Issue 8 https://doi.org/10.1063/1.341298	journal	October 1988
Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy Zhao, Xin-Hao; DiNezza, Michael J.; Liu, Shi Applied Physics Letters, Vol. 105, Issue 25 https://doi.org/10.1063/1.4904993	journal	December 2014
Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy Liu, Shi; Zhao, Xin-Hao; Campbell, Calli Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 33, Issue 1 https://doi.org/10.1116/1.4905289	journal	January 2015
Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation Kuciauskas, Darius; Kanevce, Ana; Burst, James M. IEEE Journal of Photovoltaics, Vol. 3, Issue 4 https://doi.org/10.1109/JPHOTOV.2013.2270354	journal	October 2013
Interfacial recombination velocity in GaAlAs/GaAs heterostructures Nelson, R. J.; Sobers, R. G. Applied Physics Letters, Vol. 32, Issue 11 https://doi.org/10.1063/1.89921	journal	June 1978
Optical enhancement of the open-circuit voltage in high quality GaAs solar cells Steiner, M. A.; Geisz, J. F.; García, I. Journal of Applied Physics, Vol. 113, Issue 12 https://doi.org/10.1063/1.4798267	journal	March 2013

Cited By (3)

Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17% Zhao, Yuan; Boccard, Mathieu; Liu, Shi Nature Energy, Vol. 1, Issue 6 https://doi.org/10.1038/nenergy.2016.67	journal	May 2016
Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis Perl, E. E.; Kuciauskas, D.; Simon, J. Journal of Applied Physics, Vol. 122, Issue 23 https://doi.org/10.1063/1.5003631	journal	December 2017
Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition Qian, Yingda; Liang, Yuanlan; Luo, Xuguang Advances in Materials Science and Engineering, Vol. 2018 https://doi.org/10.1155/2018/5016435	journal	July 2018

Similar Records

Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy

Journal Article · Mon Jul 27 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:1579851

Liu, Shi; Lassise, Maxwell B.; Zhao, Yuan; +3 more

Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg_0.46Cd_0.54Te Double Heterostructures

Journal Article · Mon Jan 18 00:00:00 EST 2016 · IEEE Journal of Photovoltaics · OSTI ID:1579851

Zhao, Xin-Hao; Liu, Shi; Zhao, Yuan; +4 more

Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Journal Article · Mon Dec 22 00:00:00 EST 2014 · Applied Physics Letters · OSTI ID:1579851

Zhao, Xin-Hao; Campbell, Calli M.; DiNezza, Michael J.; +3 more

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS

Title: Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1– xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy

Citation Formats

References (18)

Cited By (3)

Similar Records

Related Subjects

Title: Carrier lifetimes and interface recombination velocities in CdTe/Mg_xCd_1– _xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy