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Title: Diamond based current aperture vertical transistor and methods of making and using the same

Patent ·
OSTI ID:1576317
; ; ;

A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.

Research Organization:
Arizona State Univ., Scottsdale, AZ (United States); Univ. of California, Oakland, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AR0000453
Assignee:
Arizona Board of Regents on behalf of Arizona State University (Scottsdale, AZ); The Regents of the University of California (Oakland, CA)
Patent Number(s):
10,418,475
Application Number:
15/824,519
OSTI ID:
1576317
Resource Relation:
Patent File Date: 2017 Nov 28
Country of Publication:
United States
Language:
English

References (43)

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