Ultra low noise materials and devices for cryogenic superconductors and quantum bits
Materials, devices, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies. Device configurations may be formed from the layer according to a predetermined pattern using lithographic and/or milling techniques. An optional protective layer may be deposited on some or all of the device to avoid formation of oxides and/or patinas on surfaces of the device.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-07NA27344
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Number(s):
- 10,318,880
- Application Number:
- 14/711,718
- OSTI ID:
- 1568461
- Resource Relation:
- Patent File Date: 05/13/2015
- Country of Publication:
- United States
- Language:
- English
Isotopically Pure Silicon-on-Insulator Wafers and Method of Making Same
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patent-application | January 2003 |
Semiconductor Substrate and Method for Fabricating the Same
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patent-application | January 2004 |
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