Quantification of Dopant Profiles in SiGe HBT Devices

Conference · Mon Oct 01 00:00:00 EDT 2018

DOI:https://doi.org/10.1109/BCICTS.2018.8551114· OSTI ID:1560387

Jones, Eric ^[1]; Poplawsky, Jonathan D.  ^[2]; Leonard, Donovan N.  ^[2]; Chung, Keith ^[1]; Mercurio, Kevin ^[1]; Brabant, Paul ^[1]; Adam, Thomas ^[1]; Shea, Patrick ^[1]; Knight, Thomas ^[1]

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1. Northrop Grumman Corporation
2. ORNL

We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtained from large regions (400 um 2 ) of the device wafer to profiles obtained from individual devices of different emitter window widths (0.25 and 0.18 um 2 ) using APT. From this comparison we show how APT can provide a deeper insight into evaluating the fabrication process and its effects on electrical models of device performance and enabling the building of higher performance systems. We also demonstrate that APT can be used to characterize defects within the intrinsic regions of a device.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1560387
• Resource Relation: Conference: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2018) - San Diego, California, United States of America - 10/15/2018 8:00:00 AM-10/17/2018 8:00:00 AM
• Country of Publication: United States
• Language: English