Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector
Abstract
A study of deep levels in CdZnTeSe radiationdetection materials is presented. The approach relies on electrical methods that combine time and temperature evolution of the electric field and electric current after switching on the bias voltage. Two optical methods were also applied to study the deep levels. The first method utilizes the temperature and temporal analysis of the electric-field evolution after switching off an additional light illuminating the sample at a wavelength of 940 nm. The second method involved measuring of the electric-field spectral dependence during near infrared illumination. The results are compared with those obtained with high-quality CdZnTe detector-grade material. We conclude that the introduction of Se into the lattice leads to a shift of the second ionization level of the Cd vacancy towards the conduction band, as predicted recently by first-principles calculations based on screened hybrid functionals.
- Authors:
-
- Charles Univ., Prague (Czech Republic)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)
- Publication Date:
- Research Org.:
- Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Environmental Management (EM); USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
- OSTI Identifier:
- 1558267
- Alternate Identifier(s):
- OSTI ID: 1529877
- Report Number(s):
- SRNL-STI-2018-00420; SRNL-STI-2018-00335; BNL-211816-2019-JAAM
Journal ID: ISSN 0018-9499
- Grant/Contract Number:
- AC09-08SR22470; SC0012704
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- IEEE Transactions on Nuclear Science
- Additional Journal Information:
- Journal Volume: 66; Journal Issue: 8; Journal ID: ISSN 0018-9499
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CdZnTeSe; deep levels; electric field dynamics; energy bandgap; Pockels effect; 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Rejhon, M., Dedic, V., Beran, L., Roy, U. N., Franc, J., and James, Ralph B. Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector. United States: N. p., 2019.
Web. doi:10.1109/TNS.2019.2925311.
Rejhon, M., Dedic, V., Beran, L., Roy, U. N., Franc, J., & James, Ralph B. Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector. United States. https://doi.org/10.1109/TNS.2019.2925311
Rejhon, M., Dedic, V., Beran, L., Roy, U. N., Franc, J., and James, Ralph B. 2019.
"Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector". United States. https://doi.org/10.1109/TNS.2019.2925311. https://www.osti.gov/servlets/purl/1558267.
@article{osti_1558267,
title = {Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector},
author = {Rejhon, M. and Dedic, V. and Beran, L. and Roy, U. N. and Franc, J. and James, Ralph B.},
abstractNote = {A study of deep levels in CdZnTeSe radiationdetection materials is presented. The approach relies on electrical methods that combine time and temperature evolution of the electric field and electric current after switching on the bias voltage. Two optical methods were also applied to study the deep levels. The first method utilizes the temperature and temporal analysis of the electric-field evolution after switching off an additional light illuminating the sample at a wavelength of 940 nm. The second method involved measuring of the electric-field spectral dependence during near infrared illumination. The results are compared with those obtained with high-quality CdZnTe detector-grade material. We conclude that the introduction of Se into the lattice leads to a shift of the second ionization level of the Cd vacancy towards the conduction band, as predicted recently by first-principles calculations based on screened hybrid functionals.},
doi = {10.1109/TNS.2019.2925311},
url = {https://www.osti.gov/biblio/1558267},
journal = {IEEE Transactions on Nuclear Science},
issn = {0018-9499},
number = 8,
volume = 66,
place = {United States},
year = {Thu Jun 27 00:00:00 EDT 2019},
month = {Thu Jun 27 00:00:00 EDT 2019}
}
Web of Science
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