Low temperature thermoelectric properties of p -type doped single-crystalline SnSe
- Wuhan Univ. of Technology, Wuhan, Hubei (China). State Key Lab. of Advanced Technology for Materials Synthesis and Processing; Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
- Chongqing Univ., Chongqing (China). College of Physics
- Wuhan Univ. of Technology, Wuhan, Hubei (China). State Key Lab. of Advanced Technology for Materials Synthesis and Processing
SnSe single crystals have been widely studied lately as a result of their record high ZT and controversial low thermal conductivity. Much research has focused on the high-temperature properties of single crystals and polycrystalline SnSe, but few studies were carried out on the low-temperature properties of doped single-crystalline SnSe. To study the mechanism of the charge carrier and phonon scattering, and to eliminate the ambiguity of the high temperature thermal conductivity measurement, here we performed low temperature transport characterization of Na-doped and Ag-doped single-crystalline SnSe by a longitudinal steady-state technique. The electronic transport property measurements suggest that Na is a more efficient p-type dopant in SnSe than Ag. In the thermal conductivity data, we observe pronounced dielectric peak around 10 K with magnitude dependent on the doping level. In the p-type doped samples, we found that our room temperature lattice thermal conductivities (>1.74 W m-1 K-1) are in general higher than those previously reported. Based on these findings, this work implies that the lattice thermal conductivity values of doped and pure single-crystalline SnSe were underestimated.
- Research Organization:
- Univ. of Michigan, Ann Arbor, MI (United States)
- Sponsoring Organization:
- USDOE Office of Policy (OP); USDOE Office of International Affairs (IA)
- Grant/Contract Number:
- PI0000012; SC-0008574
- OSTI ID:
- 1540173
- Alternate ID(s):
- OSTI ID: 1431158
- Journal Information:
- Applied Physics Letters, Vol. 112, Issue 14; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Advances in thermoelectrics
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journal | April 2018 |
Lattice thermal conductivity of and SnSe using Debye-Callaway and Monte Carlo phonon transport modeling: Application to nanofilms and nanowires
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journal | September 2019 |
Thermoelectric Figure-of-Merit of Fully Dense Single-Crystalline SnSe
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journal | March 2019 |
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