Method of making highly-confined semiconductor nanocrystals
A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor precursor; heating the first solution to the nucleation temperature; and adding to the first solution, a second solution having a solvent, growth ligands, and at least one additional and different precursor than that in the first solution to form a crude solution of nanocrystals having a compact homogenous semiconductor region. The method further includes: waiting 0.5 to 20 seconds and adding to the crude solution a third solution having a solvent, growth ligands, and at least one additional and different precursor than those in the first and second solutions; and lowering the growth temperature to enable the formation of a gradient alloy region around the compact homogenous semiconductor region, resulting in the formation of a colloidal solution of high confinement semiconductor nanocrystals.
- Research Organization:
- Eastman Kodak Company, Rochester, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE000979
- Assignee:
- Eastman Kodak Company (Rochester, NY)
- Patent Number(s):
- 8,784,703
- Application Number:
- 13/275,595
- OSTI ID:
- 1532107
- Resource Relation:
- Patent File Date: 2011-10-18
- Country of Publication:
- United States
- Language:
- English
Colloidal nanocrystals and method of making
|
patent | October 2015 |
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