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Title: Graphene layer formation on a carbon based substrate

Patent ·
OSTI ID:1531899

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357; W-31-109-ENG-38
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Number(s):
8,652,946
Application Number:
13/448,068
OSTI ID:
1531899
Resource Relation:
Patent File Date: 2012-04-16
Country of Publication:
United States
Language:
English

References (6)

Graphene and hexagonal boron nitride planes and associated methods patent-application September 2010
Graphene on diamond devices and associated methods patent-application July 2012
Film on graphene on a substrate and method and devices therefor patent-application June 2012
Devices with graphene layers patent August 2010
Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates patent-application March 2011
Grahene hybrid material and method for preparing same using chemical vapor deposition patent-application February 2009

Cited By (3)