Pattern transfer with self-similar sacrificial mask layer and vector magnetic field sensor
A method is provided for producing a lithographic pattern using a mask that includes the same materials as the material to be etched, allowing the pattern to be transferred and the etch mask to be removed in one step. In accordance with features of the invention, the method includes building up of a layer or layers of material of specific thickness on top of a substrate so that temporal control of an etching process allows formation of the desired pattern. Different exchange bias directions can be established by the use of shape anisotropy for the exchange biased component of a spin valve device. This enables several different magnetic reference directions to be present on a single chip, which allows a more compact magnetic field sensor to be developed. In accordance with features of the invention, different field directions are established on one single chip by using shape anisotropy.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-31-109-ENG-38
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Number(s):
- 7,323,113
- Application Number:
- 10/980,507
- OSTI ID:
- 1531546
- Resource Relation:
- Patent File Date: 2004-11-03
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity
Resist etching kinetics and pattern transfer in a helicon plasma