Ultrahigh thermal conductivity of isotopically enriched silicon

Inyushkin, Alexander V.; Taldenkov, Alexander N.; Ager, Joel W.; Haller, Eugene E.; Riemann, Helge; Abrosimov, Nikolay V.; Pohl, Hans-Joachim; Becker, Peter

doi:10.1063/1.5017778

Title: Ultrahigh thermal conductivity of isotopically enriched silicon

Journal Article · Tue Mar 06 00:00:00 EST 2018 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5017778· OSTI ID:1530344

^[1]; Taldenkov, Alexander N. ^[1];

^[2]; Haller, Eugene E. ^[2]; Riemann, Helge ^[3];

^[3]; Pohl, Hans-Joachim ^[4]; Becker, Peter ^[5]

National Research Centre (NRC), Moscow (Russian Federation). Kurchatov Inst. (NRCKI)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
Leibniz-Institut für Kristallzüchtung, Berlin (Germany)
VITCON Projectconsult GmbH, Jena (Germany)
Physikalisch-Technische Bundesanstalt, Braunschweig (Germany)

Most of the stable elements possess two and more stable isotopes. The physical properties of materials composed of such elements depend on the isotopic abundance to some extent. A remarkably robust isotope effect is observed in the phonon thermal conductivity, the principal mechanism of heat conduction in nonmetallic crystals. An isotopic disorder due to random distribution of the isotopes in the crystal lattice sites results in a rather strong phonon scattering and, consequently, in a reduction of thermal conductivity. In this paper, we present new results of accurate and precise measurements of thermal conductivity κ(T) for silicon single crystals having three different isotopic compositions at temperatures T from 2.4 to 420 K. The highly enriched crystal containing 99.995% of ²⁸Si, which is one of the most perfect crystals ever synthesized, demonstrates a thermal conductivity of about 450 ± 10 W cm^-1K^-1 at 24 K, the highest measured value among bulk dielectrics, which is ten times greater than the one for its counterpart ^natSi with the natural isotopic constitution. For highly enriched crystal ²⁸Si and crystal ^natSi, the measurements were performed for two orientations [001] and [011], a magnitude of the phonon focusing effect on thermal conductivity was determined accurately at low temperatures. The anisotropy of thermal conductivity disappears above 31 K. The influence of the boundary scattering on thermal conductivity persists sizable up to much higher temperatures (~80 K). The κ(T) measured in this work gives the most accurate approximation of the intrinsic thermal conductivity of single crystal silicon which is determined solely by the anharmonic phonon processes and diffusive boundary scattering over a wide temperature range.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Russian Foundation for Basic Research; USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1530344

Alternate ID(s):: OSTI ID: 1423925

Journal Information:: Journal of Applied Physics, Vol. 123, Issue 9; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 17 works

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Thermal conductivity of strained silicon: Molecular dynamics insight and kinetic theory approach Kuryliuk, Vasyl; Nepochatyi, Oleksii; Chantrenne, Patrice Journal of Applied Physics, Vol. 126, Issue 5 https://doi.org/10.1063/1.5108780	journal	August 2019
Heat transfer in rough nanofilms and nanowires using full band ab initio Monte Carlo simulation Davier, B.; Larroque, J.; Dollfus, P. Journal of Physics: Condensed Matter, Vol. 30, Issue 49 https://doi.org/10.1088/1361-648x/aaea4f	journal	November 2018
Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation Davier, B.; Larroque, J.; Dollfus, P. arXiv https://doi.org/10.48550/arxiv.1807.05914	text	January 2018
Thermal conductivity of strained silicon: molecular dynamics insight and kinetic theory approach Kuryliuk, Vasyl; Nepochatyi, Oleksii; Chantrenne, Patrice arXiv https://doi.org/10.48550/arxiv.1904.10204	text	January 2019

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