Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films

Saremi, Sahar; Xu, Ruijuan; Dedon, Liv R.; Mundy, Julia A.; Hsu, Shang-Lin; Chen, Zuhuang; Damodaran, Anoop R.; Chapman, Scott P.; Evans, Joseph T.; Martin, Lane W.

doi:10.1002/adma.201603968

Title: Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films

Journal Article · Mon Oct 10 00:00:00 EDT 2016 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201603968· OSTI ID:1530221

Saremi, Sahar ^[1]; Xu, Ruijuan ^[1]; Dedon, Liv R. ^[1]; Mundy, Julia A. ^[2]; Hsu, Shang-Lin ^[2]; Chen, Zuhuang ^[2]; Damodaran, Anoop R. ^[1]; Chapman, Scott P. ^[3]; Evans, Joseph T. ^[3]; Martin, Lane W. ^[2]

Univ. of California, Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Radiant Technologies, Inc, Albuquerque, NM (United States)

140 nm PbTiO₃/20 nm SrRuO₃ thin-film heterostructures were grown on SrTiO₃(001) single-crystal substrates via pulsed-laser deposition. In order to study the properties of these films, symmetric SrRuO₃ capacitor structures were fabricated using established techniques and dramatic differences were observed in the leakage characteristics of the heterostructures. The high-pressure O₂ and O₂/Ar heterostructures reveal more than 2 orders of magnitude higher leakage current densities as compared to the low-pressure O₂ heterostructures. In turn, the high leakage current density of the heterostructures grown in high pressures precludes measurement of closed, saturated ferroelectric hysteresis loops, while nearly-square, fully saturated and closed hysteresis loops can be measured for the low-pressure O₂ heterostructures. The defects responsible for poor transport and ferroelectric properties in PbTiO₃ thin films are identified to be isolated point defects such as Pb³⁺ centers and lead vacancies, which contribute to hole conduction. Introduction of bombardment-induced defects is shown to be an effective way to quench these trap states by turning them into deep lying defect complexes and clusters which, in turn, leads to a dramatic reduction of leakage current by up to 5 orders of magnitude and improvement of ferroelectric device performance.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1530221

Journal Information:: Advanced Materials, Vol. 28, Issue 48; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 42 works

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