Long-term drift of Si-MOS quantum dots with intentional donor implants

Rudolph, M.; Sarabi, B.; Murray, R.; Carroll, M. S.; Zimmerman, Neil M.

doi:10.1038/s41598-019-43995-w

Title: Long-term drift of Si-MOS quantum dots with intentional donor implants

Journal Article · Tue May 21 00:00:00 EDT 2019 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-019-43995-w· OSTI ID:1529285

Rudolph, M. ^[1]; Sarabi, B. ^[2];

^[2]; Carroll, M. S. ^[1]; Zimmerman, Neil M. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Institute of Standards and Technology, Gaithersburg, MD (United States)

Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. Here, we study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics, in the form of transients and discrete jumps, that are not dependent on the properties of the donor implants. The equilibrium charge noise suggests a 1/f noise dependence, and a noise strength as low as 1 μeV/$$\sqrt{Hz}$$, comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). We demonstrate that implanted qubits, therefore, can be fabricated without detrimental effects on long-term drift or 1/f noise for devices with less than 50 implanted donors near the qubit.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: Work for Others (WFO); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1529285

Alternate ID(s):: OSTI ID: 1529137

Report Number(s):: SAND-2018-5080J; SAND-2019-0769J; 663041

Journal Information:: Scientific Reports, Vol. 9, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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