U.S. Department of EnergyOffice of Scientific and Technical Information
Quasi-Ballistic Thermal Transport Across MoS2 Thin Films
Abstract
Layered two-dimensional (2D) materials have highly anisotropic thermal properties between the in-plane and cross-plane directions. Conventionally, it is thought that cross-plane thermal conductivities (κz) are low, and therefore c-axis phonon mean free paths (MFPs) are small. Here, we measure κz across MoS2 films of varying thickness (20–240 nm) and uncover evidence of very long c-axis phonon MFPs at room temperature in these layered semiconductors. Experimental data obtained using time-domain thermoreflectance (TDTR) are in good agreement with first-principles density functional theory (DFT). These calculations suggest that ~50% of the heat is carried by phonons with MFP > 200 nm, exceeding kinetic theory estimates by nearly 2 orders of magnitude. Because of quasi-ballistic effects, the κz of nanometer-thin films of MoS2 scales with their thickness and the volumetric thermal resistance asymptotes to a nonzero value, ~10 m2 K GW–1. This contributes as much as 30% to the total thermal resistance of a 20 nm thick film, the rest being limited by thermal interface resistance with the SiO2 substrate and top-side aluminum transducer. Furthermore, these findings are essential for understanding heat flow across nanometer-thin films of MoS2 for optoelectronic and thermoelectric applications.
- Authors:
-
[1];
[3];
[1];
[6];
[4]
- Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Univ. of Pittsburgh, Pittsburgh, PA (United States)
- Univ. of California, Davis, CA (United States)
- Stanford Univ., Stanford, CA (United States)
- Stanford Univ., Stanford, CA (United States); Northrop Grumman Corp., Redondo Beach, CA (United States)
- Univ. of California, Davis, CA (United States); Ikerbasque, Bilbao (Spain)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1529115
- Grant/Contract Number:
- 1542883; FA9550-14-1-0251; EEC-1449548; AC02-76SF00515
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 19; Journal Issue: 4; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; phonon; mean free path; MoS2; cross-plane; thermal conductivity; time-domain thermoreflectance
Citation Formats
Sood, Aditya, Xiong, Feng, Chen, Shunda, Cheaito, Ramez, Lian, Feifei, Asheghi, Mehdi, Cui, Yi, Donadio, Davide, Goodson, Kenneth E., and Pop, Eric. Quasi-Ballistic Thermal Transport Across MoS2 Thin Films. United States: N. p., 2019.
Web. doi:10.1021/acs.nanolett.8b05174.
Sood, Aditya, Xiong, Feng, Chen, Shunda, Cheaito, Ramez, Lian, Feifei, Asheghi, Mehdi, Cui, Yi, Donadio, Davide, Goodson, Kenneth E., & Pop, Eric. Quasi-Ballistic Thermal Transport Across MoS2 Thin Films. United States. https://doi.org/10.1021/acs.nanolett.8b05174
Sood, Aditya, Xiong, Feng, Chen, Shunda, Cheaito, Ramez, Lian, Feifei, Asheghi, Mehdi, Cui, Yi, Donadio, Davide, Goodson, Kenneth E., and Pop, Eric. 2019.
"Quasi-Ballistic Thermal Transport Across MoS2 Thin Films". United States. https://doi.org/10.1021/acs.nanolett.8b05174. https://www.osti.gov/servlets/purl/1529115.
@article{osti_1529115,
title = {Quasi-Ballistic Thermal Transport Across MoS2 Thin Films},
author = {Sood, Aditya and Xiong, Feng and Chen, Shunda and Cheaito, Ramez and Lian, Feifei and Asheghi, Mehdi and Cui, Yi and Donadio, Davide and Goodson, Kenneth E. and Pop, Eric},
abstractNote = {Layered two-dimensional (2D) materials have highly anisotropic thermal properties between the in-plane and cross-plane directions. Conventionally, it is thought that cross-plane thermal conductivities (κz) are low, and therefore c-axis phonon mean free paths (MFPs) are small. Here, we measure κz across MoS2 films of varying thickness (20–240 nm) and uncover evidence of very long c-axis phonon MFPs at room temperature in these layered semiconductors. Experimental data obtained using time-domain thermoreflectance (TDTR) are in good agreement with first-principles density functional theory (DFT). These calculations suggest that ~50% of the heat is carried by phonons with MFP > 200 nm, exceeding kinetic theory estimates by nearly 2 orders of magnitude. Because of quasi-ballistic effects, the κz of nanometer-thin films of MoS2 scales with their thickness and the volumetric thermal resistance asymptotes to a nonzero value, ~10 m2 K GW–1. This contributes as much as 30% to the total thermal resistance of a 20 nm thick film, the rest being limited by thermal interface resistance with the SiO2 substrate and top-side aluminum transducer. Furthermore, these findings are essential for understanding heat flow across nanometer-thin films of MoS2 for optoelectronic and thermoelectric applications.},
doi = {10.1021/acs.nanolett.8b05174},
url = {https://www.osti.gov/biblio/1529115},
journal = {Nano Letters},
issn = {1530-6984},
number = 4,
volume = 19,
place = {United States},
year = {Wed Feb 27 00:00:00 EST 2019},
month = {Wed Feb 27 00:00:00 EST 2019}
}
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