Grain Boundary Diffusion Characterized by KPFM
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Materials aging is a high-consequence failure mode in electronic systems. Such mechanisms can degrade the electrical properties of connectors, relays, wire bonds, and other interconnections. Lost performance will impact, not only that of the device, but also the function and reliability of next-level assemblies and the weapons system as a whole. The detections of changes to materials surfaces at the nanometer-scale resolution, provides a means to identify aging processes at their early stages before they manifest into latent failures that affect system-level performance and reliability. Diffusion will be studied on thin films that undergo accelerated aging using the nanometer scale characterization technique of Frequency Modulated Kelvin Probe Force Microscopy (FM-KPFM). The KPFM provides a relatively easy, non-destructive methodology that does not require high-vacuum facilities to obtain nanometer spatial resolution of surface chemistry changes. The KPFM method can provide the means to measure surface, and near-surface, elemental concentrations that allow the determination of diffusion rate kinetics. These attributes will be illustrated by assessing diffusion in a thin film couple. Validation data will obtained from traditional techniques: (a) Auger electron spectroscopy (AES), x-ray fluorescence (XRF), and xray photoelectron spectroscopy (XPS).
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000; NA0003525
- OSTI ID:
- 1528815
- Report Number(s):
- SAND-2018-4264R; 663885
- Country of Publication:
- United States
- Language:
- English
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