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Title: MoS2 –OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates

Journal Article · · Journal of the American Chemical Society
DOI:https://doi.org/10.1021/jacs.9b00047· OSTI ID:1526212

Due to remarkable electronic property, optical transparency, and mechanical flexibility, monolayer molybdenum disulfide (MoS2) has been demonstrated to be promising for electronic and optoelectronic devices. To date, the growth of high-quality and large-scale monolayer MoS2 has been one of the main challenges for practical applications. In this paper, we present a MoS2–OH bilayer-mediated method that can fabricate inch-sized monolayer MoS2 on arbitrary substrates. This approach relies on a layer of hydroxide groups (-OH) that are preferentially attached to the (001) surface of MoS2 to form a MoS2–OH bilayer structure for growth of large-area monolayer MoS2 during the growth process. Specifically, the hydroxide layer impedes vertical growth of MoS2 layers along the [001] zone axis, promoting the monolayer growth of MoS2, constrains growth of the MoS2 monolayer only in the lateral direction into larger area, and effectively reduces sulfur vacancies and defects according to density functional theory calculations. Finally, the hydroxide groups advantageously prevent the MoS2 from interface oxidation in air, rendering high-quality MoS2 monolayers with carrier mobility up to ~30 cm2 V–1 s–1. Using this approach, inch-sized uniform monolayer MoS2 has been fabricated on the sapphire and mica and high-quality monolayer MoS2 of single-crystalline domains exceeding 200 μm has been grown on various substrates including amorphous SiO2 and quartz and crystalline Si, SiC, Si3N4, and graphene Finally, this method provides a new opportunity for the monolayer growth of other two-dimensional transition metal dichalcogenides such as WS2 and MoSe2.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; AC52-06NA25396; NA0003525
OSTI ID:
1526212
Report Number(s):
SAND-2019-6161J; 676097
Journal Information:
Journal of the American Chemical Society, Vol. 141, Issue 13; ISSN 0002-7863
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 66 works
Citation information provided by
Web of Science

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