MoS2 –OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates
- Soochow University, Suzhou (China)
- University College London (United Kingdom)
- Chinese Academy of Sciences (CAS), Beijing (China)
- University College London (United Kingdom); University of Electronic Science and Technology of China Chengdu, Sichuan (China)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of New Mexico, Albuquerque, NM (United States)
Due to remarkable electronic property, optical transparency, and mechanical flexibility, monolayer molybdenum disulfide (MoS2) has been demonstrated to be promising for electronic and optoelectronic devices. To date, the growth of high-quality and large-scale monolayer MoS2 has been one of the main challenges for practical applications. In this paper, we present a MoS2–OH bilayer-mediated method that can fabricate inch-sized monolayer MoS2 on arbitrary substrates. This approach relies on a layer of hydroxide groups (-OH) that are preferentially attached to the (001) surface of MoS2 to form a MoS2–OH bilayer structure for growth of large-area monolayer MoS2 during the growth process. Specifically, the hydroxide layer impedes vertical growth of MoS2 layers along the [001] zone axis, promoting the monolayer growth of MoS2, constrains growth of the MoS2 monolayer only in the lateral direction into larger area, and effectively reduces sulfur vacancies and defects according to density functional theory calculations. Finally, the hydroxide groups advantageously prevent the MoS2 from interface oxidation in air, rendering high-quality MoS2 monolayers with carrier mobility up to ~30 cm2 V–1 s–1. Using this approach, inch-sized uniform monolayer MoS2 has been fabricated on the sapphire and mica and high-quality monolayer MoS2 of single-crystalline domains exceeding 200 μm has been grown on various substrates including amorphous SiO2 and quartz and crystalline Si, SiC, Si3N4, and graphene Finally, this method provides a new opportunity for the monolayer growth of other two-dimensional transition metal dichalcogenides such as WS2 and MoSe2.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000; AC52-06NA25396; NA0003525
- OSTI ID:
- 1526212
- Report Number(s):
- SAND-2019-6161J; 676097
- Journal Information:
- Journal of the American Chemical Society, Vol. 141, Issue 13; ISSN 0002-7863
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Electrical properties of WSe/sub 2/, WS/sub 2/, MoSe/sub 2/, MoS/sub 2/, and their use as photoanodes in a semiconductor liquid junction solar cell
Electrical properties of WSe/sub 2/, WS/sub 2/, MoSe/sub 2/, MoS/sub 2/, and their use as photoanodes in a semiconductor/liquid junction solar cell