skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Nonthermal Plasma-Synthesized Phosphorus–Boron co-Doped Si Nanocrystals: A New Approach to Nontoxic NIR-Emitters

Journal Article · · Chemistry of Materials

We report on the successful creation of nonthermal plasma-synthesized phorphorus and boron co-doped Si nanocrystals (PB:Si NCs) with diameters (DNC) ranging from 2.9 to 7.3 nm. Peak photoluminescence (PL) emission energies for all PB:Si NC diameters are ca. 400-500 meV lower than the excitonic emission values in intrinsic Si NCs, which can be attributed to prevalent donor-acceptor (D-A) transitions within the co-doped system. This D-A transition model is further evidenced by PL lifetimes within the range of 40-80 us, faster than what is observed for intrinsic Si NCs. By reducing the level of confinement within PB:Si NCs (i.e., DNC > 4 nm), we are able to red-shift the near-infrared (NIR)-emitting D-A transitions to below the band gap of bulk Si (1.12 eV). We quantify the PL quantum yield (PLQY) for a range of DNC and show that the plasma method can achieve reasonably high PLQY values (12% for DNC = 2.9 nm), even without any optimization of the synthesis or surface chemistry. We posit that perfect charge compensation cannot explain these results and propose a model in which dominant n-type doping accounts for the observations. Furthermore, these results demonstrate that nonthermal plasma synthesis is a viable pathway for preparing PB:Si NCs featuring NIR sub-band gap D-A transitions with relatively high quantum yields. More generally, this study provides insight into how doping affects energy and charge transfer within quantum-confined systems.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22), Solar Photochemistry Program; USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1524321
Report Number(s):
NREL/JA-5900-73281
Journal Information:
Chemistry of Materials, Vol. 31, Issue 12; ISSN 0897-4756
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 16 works
Citation information provided by
Web of Science

References (62)

Air-Stable All-Inorganic Nanocrystal Solar Cells Processed from Solution journal October 2005
Solution-processed PbS quantum dot infrared photodetectors and photovoltaics journal January 2005
Synergism in binary nanocrystal superlattices leads to enhanced p-type conductivity in self-assembled PbTe/Ag2Te thin films journal January 2007
PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors journal October 2005
Quantum Dots for Live Cells, in Vivo Imaging, and Diagnostics journal January 2005
Peptide-Labeled Near-Infrared Quantum Dots for Imaging Tumor Vasculature in Living Subjects journal March 2006
Infrared Quantum Dots: Progress, Challenges, and Opportunities journal January 2019
Silicon nanostructures for photonics and photovoltaics journal January 2014
Carrier multiplication in germanium nanocrystals journal February 2015
High-performance Ge-on-Si photodetectors journal July 2010
Emission efficiency limit of Si nanocrystals journal January 2016
Plasma synthesis and liquid-phase surface passivation of brightly luminescent Si nanocrystals journal December 2006
Switching-On Quantum Size Effects in Silicon Nanocrystals journal December 2014
High-Yield Plasma Synthesis of Luminescent Silicon Nanocrystals journal April 2005
Silicon nanocrystals with ensemble quantum yields exceeding 60% journal June 2006
High-Efficiency Silicon Nanocrystal Light-Emitting Devices journal May 2011
A Silicon Nanocrystal Schottky Junction Solar Cell produced from Colloidal Silicon Nanocrystals journal May 2010
Tuning Confinement in Colloidal Silicon Nanocrystals with Saturated Surface Ligands journal April 2018
Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities journal August 2004
Below bulk-band-gap photoluminescence at room temperature from heavily P- and B-doped Si nanocrystals journal August 2003
Room-temperature below bulk-Si band gap photoluminescence from P and B co-doped and compensated Si nanocrystals with narrow size distributions journal May 2011
Atom Probe Tomography Analysis of Boron and/or Phosphorus Distribution in Doped Silicon Nanocrystals journal July 2016
Size-Dependence of Acceptor and Donor Levels of Boron and Phosphorus Codoped Colloidal Silicon Nanocrystals journal March 2016
Negligible Electronic Interaction between Photoexcited Electron–Hole Pairs and Free Electrons in Phosphorus–Boron Co-Doped Silicon Nanocrystals journal February 2018
Electronic structure of Si nanocrystals codoped with boron and phosphorus journal July 2018
Toward Practical Carrier Multiplication: Donor/Acceptor Codoped Si Nanocrystals in SiO 2 journal December 2017
Doped and codoped silicon nanocrystals: The role of surfaces and interfaces journal December 2017
Synthesis of boron and phosphorus codoped all-inorganic colloidal silicon nanocrystals from hydrogen silsesquioxane journal January 2014
Phosphorus and Boron Codoped Colloidal Silicon Nanocrystals with Inorganic Atomic Ligands journal March 2013
All-inorganic water-dispersible silicon quantum dots: highly efficient near-infrared luminescence in a wide pH range journal January 2014
Donor–Acceptor Pair Recombination in Size-Purified Silicon Quantum Dots journal September 2018
Spectroscopic investigations of dark Si nanocrystals in SiO 2 and their role in external quantum efficiency quenching journal August 2013
Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus journal July 2015
Doped Silicon Nanocrystal Plasmonics journal March 2017
Size-Dependent Asymmetric Auger Interactions in Plasma-Produced n- and p-Type-Doped Silicon Nanocrystals journal February 2019
Free electron-driven photophysics in n-type doped silicon nanocrystals journal January 2018
Silyl Radical Abstraction in the Functionalization of Plasma-Synthesized Silicon Nanocrystals journal September 2015
Nonthermal Plasma Synthesis of Core/Shell Quantum Dots: Strained Ge/Si Nanocrystals journal February 2017
Infrared matrix isolation characterization of aminoborane and related compounds journal May 1991
Thermodynamic Driving Force in the Spontaneous Formation of Inorganic Nanoparticle Solutions journal February 2018
Theoretical aspects of the luminescence of porous silicon journal October 1993
Matrix-embedded silicon quantum dots for photovoltaic applications: a theoretical study of critical factors journal January 2011
Codoping n- and p-Type Impurities in Colloidal Silicon Nanocrystals: Controlling Luminescence Energy from below Bulk Band Gap to Visible Range journal May 2013
Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy journal September 2018
Size-Dependent Absolute Quantum Yields for Size-Separated Colloidally-Stable Silicon Nanocrystals journal December 2011
Size-Dependent Photoluminescence Efficiency of Silicon Nanocrystal Quantum Dots journal October 2017
High-Throughput Study of Compositions and Optical Properties in Heavily Co-Doped Silicon Nanoparticles journal November 2017
Narrow Luminescence Linewidth of a Silicon Quantum Dot journal March 2005
Breakdown of the k -Conservation Rule in Si Nanocrystals journal September 1998
Experimental Investigations and Modeling of Auger Recombination in Silicon Nanocrystals journal March 2013
Multiple Exciton Generation in Colloidal Silicon Nanocrystals journal August 2007
Universal Size-Dependent Trend in Auger Recombination in Direct-Gap and Indirect-Gap Semiconductor Nanocrystals journal May 2009
Quantization of Multiparticle Auger Rates in Semiconductor Quantum Dots journal February 2000
Synthesis and Spectroscopy of Silver-Doped PbSe Quantum Dots journal July 2017
Amorphization and recrystallization of ion implanted Si nanocrystals probed through their luminescence properties journal March 2003
Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films journal April 2004
Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications journal August 2016
Effects of simultaneous doping with boron and phosphorous on the structural, electronic and optical properties of silicon nanostructures journal May 2009
Doping semiconductor nanocrystals journal July 2005
Doping efficiency, dopant location, and oxidation of Si nanocrystals journal March 2008
Localized Surface Plasmon Resonance in Semiconductor Nanocrystals journal February 2018
Localized surface plasmon resonances arising from free carriers in doped quantum dots journal April 2011

Cited By (1)

Achieving spin-triplet exciton transfer between silicon and molecular acceptors for photon upconversion journal December 2019