Design Optimization of GaN Vertical Power Diodes and Comparison to Si and SiC.

Conference · Mon Jan 01 00:00:00 EST 2018

DOI:https://doi.org/10.1109/WiPDA.2017.8170498· OSTI ID:1513658

Flicker, Jack David; Kaplar, Robert

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1513658
• Report Number(s): SAND2018-0879C; 660205
• Resource Relation: Conference: Proposed for presentation at the Wide Bandgap Power Devices and Applications (WiPDA) held October 30 - November 1, 2017 in Albuquerque, New Mexico, United States.
• Country of Publication: United States
• Language: English