Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors
Abstract
We investigate the valley Hall effect (VHE) in monolayer WSe2 field-effect transistors using optical Kerr rotation measurements at 20 K. While studies of the VHE have so far focused on n-doped MoS2, we observe the VHE in WSe2 in both the n- and p-doping regimes. Hole doping enables access to the large spin-splitting of the valence band of this material. The Kerr rotation measurements probe the spatial distribution of the valley carrier imbalance induced by the VHE. Under current flow, we observe distinct spin-valley polarization along the edges of the transistor channel. From analysis of the magnitude of the Kerr rotation, we infer a spin-valley density of 44 spins/μm, integrated over the edge region in the p-doped regime. As a result, assuming a spin diffusion length less than 0.1 μm, this corresponds to a spin-valley polarization of the holes exceeding 1%.
- Authors:
-
- Stanford Univ., Stanford, CA (United States)
- Stanford Univ., Stanford, CA (United States); Univ. of Texas at Austin, Austin, TX (United States)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1507158
- Grant/Contract Number:
- AC02-76SF00515; GBMF4545; FA9550-14-1-0040; FA9550-14-0251; 939514; PGSD3-502559-2017; 1741691; 1523883; ECCS-154215
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 19; Journal Issue: 2; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; magneto-optical Kerr effect; spintronics; Tungsten diselenide; valleytronics
Citation Formats
Barré, Elyse, Incorvia, Jean Anne C., Kim, Suk Hyun, McClellan, Connor J., Pop, Eric, Wong, H. -S. Philip, and Heinz, Tony F. Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors. United States: N. p., 2019.
Web. doi:10.1021/acs.nanolett.8b03838.
Barré, Elyse, Incorvia, Jean Anne C., Kim, Suk Hyun, McClellan, Connor J., Pop, Eric, Wong, H. -S. Philip, & Heinz, Tony F. Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors. United States. https://doi.org/10.1021/acs.nanolett.8b03838
Barré, Elyse, Incorvia, Jean Anne C., Kim, Suk Hyun, McClellan, Connor J., Pop, Eric, Wong, H. -S. Philip, and Heinz, Tony F. 2019.
"Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors". United States. https://doi.org/10.1021/acs.nanolett.8b03838. https://www.osti.gov/servlets/purl/1507158.
@article{osti_1507158,
title = {Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors},
author = {Barré, Elyse and Incorvia, Jean Anne C. and Kim, Suk Hyun and McClellan, Connor J. and Pop, Eric and Wong, H. -S. Philip and Heinz, Tony F.},
abstractNote = {We investigate the valley Hall effect (VHE) in monolayer WSe2 field-effect transistors using optical Kerr rotation measurements at 20 K. While studies of the VHE have so far focused on n-doped MoS2, we observe the VHE in WSe2 in both the n- and p-doping regimes. Hole doping enables access to the large spin-splitting of the valence band of this material. The Kerr rotation measurements probe the spatial distribution of the valley carrier imbalance induced by the VHE. Under current flow, we observe distinct spin-valley polarization along the edges of the transistor channel. From analysis of the magnitude of the Kerr rotation, we infer a spin-valley density of 44 spins/μm, integrated over the edge region in the p-doped regime. As a result, assuming a spin diffusion length less than 0.1 μm, this corresponds to a spin-valley polarization of the holes exceeding 1%.},
doi = {10.1021/acs.nanolett.8b03838},
url = {https://www.osti.gov/biblio/1507158},
journal = {Nano Letters},
issn = {1530-6984},
number = 2,
volume = 19,
place = {United States},
year = {Wed Jan 02 00:00:00 EST 2019},
month = {Wed Jan 02 00:00:00 EST 2019}
}
Web of Science
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