skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High spin polarization in epitaxial Fe4N thin films using Cr and Ag as buffer layers

Abstract

Fe4N thin films with (001) texture were prepared by reactive sputtering on MgO substrates, utilizing either a Cr or Ag buffer layer to facilitate the epitaxial growth. X-ray diffraction, atomic force microscopy, and vibrating sample magnetometry measurements show that the Fe4N thin film grown on the Ag buffer layer is superior to that grown on the Cr buffer layer. The point contact Andreev reflection measurement was then conducted, and the spin polarizations were determined to be 61.1% and 81.3% for Fe4N thin films with Cr and Ag buffer layers, respectively. The 81.3% spin polarization is significantly higher than the ratio reported previously for Fe4N and is comparable with that of state-of-the-art Heusler alloys. This result is in agreement with the theoretical prediction on the discrepancy between the two differently defined spin polarizations for Fe4N. Moreover, our study indicates that an optimized growth process for Fe4N thin films is crucial for achieving a high spin polarization and that true half-metallicity could potentially be realized with Fe4N. Furthermore the high spin polarization of Fe4N combined with its low fabrication temperature and simple composition makes Fe4N a competitive candidate to be a half-metallic ferromagnet in spintronic devices.

Authors:
 [1];  [1];  [2];  [2];  [1];  [3]; ORCiD logo [2];  [1]
  1. Univ. of Minnesota, Minneapolis, MN (United States)
  2. Arizona State Univ., Tempe, AZ (United States)
  3. Western Digital Corp., San Jose, CA (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES); Univ. of California, Riverside, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1503634
Alternate Identifier(s):
OSTI ID: 1433574
Grant/Contract Number:  
SC0012670
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Li, Hongshi, Li, Xuan, Kim, Dongrin, Zhao, Gejian, Zhang, Delin, Diao, Zhitao, Chen, Tingyong, and Wang, Jian -Ping. High spin polarization in epitaxial Fe4N thin films using Cr and Ag as buffer layers. United States: N. p., 2018. Web. doi:10.1063/1.5023698.
Li, Hongshi, Li, Xuan, Kim, Dongrin, Zhao, Gejian, Zhang, Delin, Diao, Zhitao, Chen, Tingyong, & Wang, Jian -Ping. High spin polarization in epitaxial Fe4N thin films using Cr and Ag as buffer layers. United States. https://doi.org/10.1063/1.5023698
Li, Hongshi, Li, Xuan, Kim, Dongrin, Zhao, Gejian, Zhang, Delin, Diao, Zhitao, Chen, Tingyong, and Wang, Jian -Ping. 2018. "High spin polarization in epitaxial Fe4N thin films using Cr and Ag as buffer layers". United States. https://doi.org/10.1063/1.5023698. https://www.osti.gov/servlets/purl/1503634.
@article{osti_1503634,
title = {High spin polarization in epitaxial Fe4N thin films using Cr and Ag as buffer layers},
author = {Li, Hongshi and Li, Xuan and Kim, Dongrin and Zhao, Gejian and Zhang, Delin and Diao, Zhitao and Chen, Tingyong and Wang, Jian -Ping},
abstractNote = {Fe4N thin films with (001) texture were prepared by reactive sputtering on MgO substrates, utilizing either a Cr or Ag buffer layer to facilitate the epitaxial growth. X-ray diffraction, atomic force microscopy, and vibrating sample magnetometry measurements show that the Fe4N thin film grown on the Ag buffer layer is superior to that grown on the Cr buffer layer. The point contact Andreev reflection measurement was then conducted, and the spin polarizations were determined to be 61.1% and 81.3% for Fe4N thin films with Cr and Ag buffer layers, respectively. The 81.3% spin polarization is significantly higher than the ratio reported previously for Fe4N and is comparable with that of state-of-the-art Heusler alloys. This result is in agreement with the theoretical prediction on the discrepancy between the two differently defined spin polarizations for Fe4N. Moreover, our study indicates that an optimized growth process for Fe4N thin films is crucial for achieving a high spin polarization and that true half-metallicity could potentially be realized with Fe4N. Furthermore the high spin polarization of Fe4N combined with its low fabrication temperature and simple composition makes Fe4N a competitive candidate to be a half-metallic ferromagnet in spintronic devices.},
doi = {10.1063/1.5023698},
url = {https://www.osti.gov/biblio/1503634}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 16,
volume = 112,
place = {United States},
year = {Wed Apr 18 00:00:00 EDT 2018},
month = {Wed Apr 18 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 16 works
Citation information provided by
Web of Science

Figures / Tables:

FIG. 1 FIG. 1: (a) θ-2θ XRD scans of the Fe4N films grown on Cr and Ag buffer layers. (b) Rocking curve measurement of Fe4N (002) peaks.

Save / Share:

Works referenced in this record:

Negative spin polarization at the Fermi level in Fe 4 N epitaxial films by spin-resolved photoelectron spectroscopy
journal, July 2012


Damping constant measurement and inverse giant magnetoresistance in spintronic devices with Fe 4 N
journal, December 2017


The calculated electronic and magnetic structures of Fe4N and Mn 4N
journal, January 1988


New Class of Materials: Half-Metallic Ferromagnets
journal, June 1983


Epitaxial growth and thermal stability of Fe 4 N film on TiN buffered Si(001) substrate
journal, April 2011


Anomalous Hall effects in pseudo-single-crystal γ ′-Fe 4 N thin films
journal, May 2016


Spin polarization and Gilbert damping of Co2Fe(GaxGe1−x) Heusler alloys
journal, October 2012


Negative anisotropic magnetoresistance resulting from minority spin transport in Ni x Fe 4− x N ( x  = 1 and 3) epitaxial films
journal, January 2017


Huge Spin-Polarization of L2 1 -Ordered Co 2 MnSi Epitaxial Heusler Alloy Film
journal, August 2005


Factors affecting surface roughness and coercivity of Ni[sub 80]Fe[sub 20] thin films
journal, January 2002


Theoretical analysis of highly spin-polarized transport in the iron nitride Fe 4 N
journal, May 2006


Deposition and spin polarization study of Fe 4 N thin films with (111) orientation
journal, September 2017


Spin polarization of amorphous CoFeB determined by point-contact Andreev reflection
journal, June 2008


Relations of electronic energies and magnetic moments of tetra-3d metal (Mn, Fe, Co and Ni) nitrides calculated using a plane-wave basis method
journal, September 2010


Co2MnSi Heusler alloy as magnetic electrodes in magnetic tunnel junctions
journal, July 2004


Large tunnel magnetoresistance in magnetic tunnel junctions using a Co2MnSi Heusler alloy electrode and a MgO barrier
journal, September 2008


Structure and magnetic properties of γ′-Fe4N films grown on MgO-buffered Si (001)
journal, December 2012


Ab initio study of structural and magnetic properties of cubic Fe4N(001) surface
journal, August 2012


Electric-field tunable perpendicular magnetic anisotropy in tetragonal Fe 4 N/BiFeO 3 heterostructures
journal, July 2017


Perpendicular magnetic anisotropy and high spin-polarization ratio in epitaxial Fe-N thin films
journal, December 2011


Self-consistent calculations for the electronic structures of iron nitrides, Fe3N, Fe4N and Fe16N2
journal, December 1991


Structural and magnetic properties of epitaxially grown full-Heusler alloy Co2MnGe thin films deposited using magnetron sputtering
journal, April 2006


Thin film phase diagram of iron nitrides grown by molecular beam epitaxy
journal, January 2017


Structural and magnetic properties of size-controlled Mn0.5Zn0.5Fe2O4 nanoparticles and magnetic fluids
journal, October 2009


Pronounced effects of additional resistance in Andreev reflection spectroscopy
journal, June 2010


Investigation on the structure and magnetic properties at low temperature for nanocrystalline γ′-Fe4N thin films
journal, January 2009


Fabrication of highly spin-polarized Co 2 FeAl 0.5 Si 0.5 thin-films
journal, April 2014


Probing Ferromagnets with Andreev Reflection
journal, October 1998


Determination of the Spin Polarization of Half-Metallic CrO 2 by Point Contact Andreev Reflection
journal, June 2001


Tunneling between ferromagnetic films
journal, September 1975


75% inverse magnetoresistance at room temperature in Fe4N/MgO/CoFeB magnetic tunnel junctions fabricated on Cu underlayer
journal, April 2009


Ab initio studies of magnetic properties of cobalt and tetracobalt nitride Co 4 N
journal, June 2007


Spin polarization of Fe4N thin films determined by point-contact Andreev reflection
journal, May 2009


Negative Anisotropic Magnetoresistance in Fe 4 N Film
journal, July 2009


Diamond-like carbon films prepared by facing-target sputtering
journal, December 2002


Works referencing / citing this record:

Strain relaxation in epitaxial γ ′-Fe 4 N ultrathin films
journal, September 2019


Effect of interfacial interdiffusion on magnetism in epitaxial Fe 4 N films on LaAlO 3 substrates
journal, November 2019


In-situ growth of iron mononitride thin films studied using x-ray absorption spectroscopy and nuclear resonant scattering
text, January 2019


Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.