Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters

Journal Article · Fri Dec 21 00:00:00 EST 2018 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.8b19302· OSTI ID:1503562

Diulus, J. Trey ^[1]; Frederick, Ryan T. ^[1]; Li, Mengjun ^[2]; Hutchison, Danielle C. ^[3]; Olsen, Morgan R. ^[3]; Lyubinetsky, Igor ^[1]; Árnadóttir, Líney  ^[1]; Garfunkel, Eric L. ^[2]; Nyman, May  ^[3]; Ogasawara, Hirohito  ^[4]; Herman, Gregory S.  ^[5]

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1. Oregon State Univ., Corvallis, OR (United States). School of Chemical, Biological and Environmental Engineering
2. Rutgers Univ., Piscataway, NJ (United States). Dept. of Chemistry and Chemical Biology
3. Oregon State Univ., Corvallis, OR (United States). Dept. of Chemistry
4. SLAC National Accelerator Lab., Menlo Park, CA (United States)
5. Oregon State Univ., Corvallis, OR (United States). School of Chemical, Biological and Environmental Engineering and Dept. of Chemistry

Advances in extreme ultraviolet (EUV) photolithography require the development of next-generation resists that allow high-volume nanomanufacturing with a single nanometer patterning resolution. Organotin-based photoresists have demonstrated nanopatterning with high resolution, high sensitivity, and low-line edge roughness. However, very little is known regarding the detailed reaction mechanisms that lead to radiation-induced solubility transitions. In this study, we investigate the interaction of soft X-ray radiation with organotin clusters to better understand radiation-induced chemistries associated with EUV lithography. Butyltin Keggin clusters (β-NaSn13) were used as a model organotin photoresist, and characterization was performed using ambient-pressure X-ray photoelectron spectroscopy. The changes in relative atomic concentrations and associated chemical states in β-NaSn₁₃ resists were evaluated after exposure to radiation for a range of ambient conditions and photon energies. A significant reduction in the C 1s signal versus exposure time was observed, which corresponds to the radiation-induced homolytic cleavage of the butyltin bond in the β-NaSn₁₃ clusters. To improve the resist sensitivity, we evaluated the effect of oxygen partial pressure during radiation exposures. Here, we found that both photon energy and oxygen partial pressure had a strong influence on the butyl group desorption rate. These studies advance the understanding of radiation-induced processes in β-NaSn₁₃ photoresists and provide mechanistic insights for EUV photolithography.

• Research Organization: SLAC National Accelerator Lab., Menlo Park, CA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
• Grant/Contract Number: AC02-76SF00515; CHE-1606982; 2013-OJ-2438
• OSTI ID: 1503562
• Journal Information: ACS Applied Materials and Interfaces, Vol. 11, Issue 2; ISSN 1944-8244
• Publisher: American Chemical Society (ACS)
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
APXPS
EUV lithography
nanocluster
organotin-based photoresist
XAS