Toward a Monolithic Lattice-Matched III-V on Silicon Tandem Solar Cell
Conference
·
OSTI ID:15009718
A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated some of the key components toward realizing such a cell, including GaNPAs top cells grown on silicon substrates, GaP-based tunnel junctions grown on silicon substrates, and diffused silicon junctions formed during the epitaxial growth of GaNP on silicon. These components have required the development of techniques for the growth of high crystalline quality GaNPAs on silicon by metal-organic vapor-phase epitaxy.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 15009718
- Report Number(s):
- NREL/CP-520-35323; TRN: US200430%%1002
- Resource Relation:
- Conference: Prepared for the 19th European PV Solar Energy Conference and Exhibition, Paris (FR), 06/07/2004--06/11/2004; Other Information: PBD: 1 Sep 2004
- Country of Publication:
- United States
- Language:
- English
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