Dark Current Transients in Thin-Film CdTe Solar Cells: Preprint
This conference paper describes the Dark current transients measured by changing the voltage bias in a stepwise fashion on CdTe cells results in minutes-long transients after each step. Transients measured at room temperature are controlled by carrier trapping that corresponds to the well known voltage transient phenomena[1]. Transients measured on the same CdTe cell at elevated temperature (60C and 90C) show a much slower decay process. We associate this physical process with''shunt'' current paths induced with reverse bias and removed with forward bias. A different back contact process may produce an opposite voltage dependence. The lack of these transients may be required for the fabrication of ''stable'' thin-film CdTe solar cells.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 15007050
- Report Number(s):
- NREL/CP-520-32194; TRN: US200413%%99
- Resource Relation:
- Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
- Country of Publication:
- United States
- Language:
- English
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