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Title: Research on the Hydrogen Passivation of Defects and Impurities in Si Relevant to Crystalline Si Solar Cell Materials: Final Report, 16 February 2000 -- 15 April 2003

Technical Report ·
DOI:https://doi.org/10.2172/15004722· OSTI ID:15004722

The goal of this experimental research program is to increase the understanding, at a microscopic level, of hydrogenation processes and passivation mechanisms for crystalline-Si photovoltaics. In our experiments, vibrational spectroscopy was used to study the properties of the interstitial H2 molecule in Si and the transition-metal-hydrogen complexes in Si. The interstitial H2 molecule is formed readily in Si when hydrogen is introduced. Our studies establish that interstitial H2 in Si behaves as a nearly free rotator, solving puzzles about the behavior of this defect that have persisted since the discovery of its vibrational spectrum. The transition metals are common impurities in Si that decrease the minority-carrier lifetime and degrade the efficiencies of solar cells. Therefore, the possibility that transition-metal impurities in Si might be passivated by hydrogen has long been of interest. Our studies of transition-metal-H complexes in Si help to establish the structural and electrical properties of a family of Pt-H complexes in Si, and have made the Pt-H complexes a model system for understanding the interaction of hydrogen with transition-metal impurities in Si.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC36-99-GO10337
OSTI ID:
15004722
Report Number(s):
NREL/SR-520-34821; ACQ-9-29639-02; TRN: US200320%%483
Resource Relation:
Other Information: PBD: 1 Sep 2003; Related Information: Work performed by Lehigh University, Bethlehem, Pennsylvania
Country of Publication:
United States
Language:
English