In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry
Real-time, in-situ characterization of hot-wire chemical vapor deposition (HWCVD) growth of hydrogenated silicon (Si:H) thin films offers unique insight into the properties of the materials and mechanisms of their growth. We have used in-situ spectroscopic ellipsometry to characterize Si:H crystallinity as a function of film thickness and deposition conditions. We find that the transition from amorphous to microcrystalline growth is a strong function of film thickness and hydrogen dilution, and a weak function of substrate temperature. We have expressed this information in terms of a color-coded phase-space map of the amorphous to microcrystalline transition in HWCVD growth on crystalline Si substrates.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 15004255
- Report Number(s):
- NREL/CP-520-33571; TRN: US201015%%440
- Resource Relation:
- Conference: Presented at the National Center for Photovoltaics and Solar Program Review Meeting, 24-26 March 2003, Denver, Colorado
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DILUTION
ELLIPSOMETRY
HYDROGEN
PHASE SPACE
SILICON
SUBSTRATES
THICKNESS
THIN FILMS
CHARACTERIZATION
REAL-TIME SPECTROSCOPIC ELLIPSOMETRY
HOT-WIRE CHEMICAL VAPOR DEPOSITION
HYDROGENATED SILICON
CRYSTALLINITY
Solar Energy - Photovoltaics