Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

Saenz, Gustavo A.; Karapetrov, Goran; Curtis, James; Kaul, Anupama B.

doi:10.1038/s41598-018-19367-1

Title: Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS₂ Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

Journal Article · Fri Jan 19 00:00:00 EST 2018 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-018-19367-1· OSTI ID:1499995

Saenz, Gustavo A. ^[1]; Karapetrov, Goran ^[2]; Curtis, James ^[2]; Kaul, Anupama B. ^[1]

Univ. of North Texas, Denton, TX (United States). Dept. of Materials Science and Engineering. PACCAR Technology Inst. Dept. of Electrical Engineering; Univ. of Texas, El Paso, TX (United States). Dept. of Electrical and Computer Engineering
Drexel Univ., Philadelphia, PA (United States). Dept. of Physics

The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS₂ is presented, which is a less explored system compared to direct band gap monolayer MoS₂ that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS₂ membranes. The photoresponsivity R was measured to be ~1.4 × 10⁴ A/W, which is > 10⁴ times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 10¹¹ Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~10⁴. From time-resolved photocurrent measurements, a decay time τ _d ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.

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Research Organization:: Univ. of North Texas, Denton, TX (United States); Drexel Univ., Philadelphia, PA (United States); Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: SC0012575; FA9550-15-1-0200

OSTI ID:: 1499995

Journal Information:: Scientific Reports, Vol. 8; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 36 works

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Title: Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

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